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Philips |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PN2907A
PNP switching transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 05
Philips Semiconductors
PNP switching transistor
Product specification
PN2907A
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 60 V).
APPLICATIONS
• Switching and linear amplification.
DESCRIPTION
PNP switching transistor in a TO-92; SOT54 plastic
package. NPN complement: PN2222A.
PINNING
PIN
1
2
3
collector
base
emitter
DESCRIPTION
handbook, halfpage1
2
3
2
MAM280
1
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
IC
Ptot
hFE
fT
toff
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
turn-off time
open emitter
open base
CONDITIONS
Tamb ≤ 25 °C
IC = −150 mA; VCE = −10 V
IC = −50 mA; VCE = −20 V; f = 100 MHz
ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA
MIN.
−
−
−
−
100
200
−
MAX.
−60
−60
−600
500
300
−
365
UNIT
V
V
mA
mW
MHz
ns
1997 May 05
2
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