PN168 반도체 회로 부품 판매점
Silicon NPN Phototransistor
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 Panasonic Semiconductor |
Phototransistors
PNA1801L (PN168)
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Wide spectral sensitivity, suited for detecting GaAs LEDs
Small size, high output power, low cost
ø 3 plastic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
VECO
IC
PC
Topr
Tstg
Ratings
30
5
20
100
–25 to +85
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
ø3.8±0.2
ø3.0±0.2
Unit : mm
2-0.8 max.
2-0.5±0.1
2
1
2.54
0.5±0.1
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
ICEO
ICE(L)
λP
θ
VCE = 10V
VCE = 10V, L = 500 lx*1
VCE = 10V
Measured from the optical axis to the half power point
0.8
Response time
Collector saturation voltage
tr, tf*2
VCE(sat)
VCC = 10V, ICE(L) = 1mA, RL = 100Ω
ICE(L) = 1mA, L = 1000 lx*1
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
typ
0.005
3
800
35
4
0.2
max
0.5
0.5
Unit
µA
mA
nm
deg.
µs
V
Sig.IN
50Ω
VCC
(Input pulse)
Sig.OUT
RL
(Output pulse) td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Note) The part number in the parenthesis shows conventional part number.
1
Phototransistors
PNA1801L
PC — Ta
120
100
80
60
40
20
0
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
ICE(L) — VCE
20
Ta = 25˚C
T = 2856K
16
L = 2000 lx
1750 lx
12 1500 lx
1250 lx
1000 lx
8
750 lx
4 500 lx
250 lx
0
0 4 8 12 16
Collector to emitter voltage
100 lx
20 24
VCE (V)
10 3
10 2
10
1
10 –1
10 –2
1
ICE(L) — L
VCE = 10V
Ta = 25˚C
T = 2856K
10 10 2 10 3
Illuminance L (lx)
10 4
ICEO — Ta
10 3
VCE = 10V
10 2
10
1
ICE(L) — Ta
10 2
VCE = 10V
T = 2856K
Spectral sensitivity characteristics
100 VCE = 10V
Ta = 25˚C
80
10 L = 1000 lx
500 lx
60
40
1
20
10 –1
– 40
0
40 80 120
Ambient temperature Ta (˚C )
10 –1
– 40
0
40 80 120
Ambient temperature Ta (˚C )
0
200 400 600 800 1000 1200
Wavelength λ (nm)
Directivity characteristics
0˚ 10˚ 20˚
100
90
80 30˚
70
60
40˚
50
40 50˚
30 60˚
20 70˚
80˚
90˚
tr — ICE(L)
10 4 Ta = 25˚C
10 3
10 2
RL = 1kΩ
10 500Ω
100Ω
1
10 –1
10 –2
10 –1
1
10 10 2
Collector photo current ICE(L) (mA)
tf — ICE(L)
10 4 Ta = 25˚C
10 3
10 2
RL = 1kΩ
10 500Ω
100Ω
1
10 –1
10 –2
10 –1
1
10 10 2
Collector photo current ICE(L) (mA)
2
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PN168 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
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