SQ202 반도체 회로 부품 판매점
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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 Polyfet RF Devices |
polyfet rf devices
SQ202
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
TM
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
10.0 Watts Push - Pull
Package Style AQ
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
Total
Device
Dissipation
50 Watts
Junction to
Case Thermal
Resistance
o
3.40 C/W
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Maximum
Junction
Temperature
200 oC
Storage
Temperature
oo
-65 C to 150 C
DC Drain
Current
3.0 A
Drain to
Gate
Voltage
70 V
Drain to
Source
Voltage
70 V
Gate to
Source
Voltage
20 V
RF CHARACTERISTICS ( 10.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gain
η Drain Efficiency
10
40
dB Idq = 0.80 A, Vds = 28.0 V, F = 1,000MHz
% Idq = 0.80 A, Vds = 28.0 V, F = 1,000 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.80 A, Vds = 28.0 V, F =1,000MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Drain Breakdown Voltage
Zero Bias Drain Current
65 V Ids = 20.00 mA, Vgs = 0V
0.4 mA
Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Current
1 uA
Vds = 0V Vgs = 30V
Vgs Gate Bias for Drain Current
1
7V
Ids = 0.04 A, Vgs = Vds
gM Forward Transconductance
0.6 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
2.00
Ohm
Vgs = 20V, Ids = 1.00 A
Idsat
Saturation Current
2.80 Amp Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance
20.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
1.2 pF Vds = 28.0 Vgs = 0V, F = 1 MHz
Coss Common Source Output Capacitance
12.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 03/28/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
SQ202
POUT VS PIN GRAPH
SQ202 POUT VS PIN Freq=1000MHz, VDS=28V, Idq=.4A
16 14.00
14 13.00
12 12.00
Pout 11.00
10
Efficiency = 40%
10.00
8
9.00
6
Gain
8.00
4 7.00
2 6.00
0 5.00
0 0.5 1 1.5 2 2.5 3 3.5 4
PIN IN WATTS
IV CURVE
S2A 2 DIE IV
3
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 12 14 16 18 20
vg=2v Vg=4v VgV=6DvSINVOLTSvg=8v 0 vg=12v
Zin Zout
100
10
1
0.1
0
10.00
1.00
0.10
0
CAPACITANCE VS VOLTAGE
S2A 2 DICE CAPACITANCE
Ciss
Coss
Crss
5 10 15 20
VDS IN VOLTS
ID & GM VS VGS
S2A 2 DIE ID & GM Vs VG
25
30
Id
gM
2 4 6 8 10 12
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
14
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 03/28/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
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제조업체: Polyfet RF Devices
( polyfet )
SQ202 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
SQ201
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR - Polyfet RF Devices
SQ202
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR - Polyfet RF Devices