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PDF MMBTH10 Data sheet ( Hoja de datos )
| Número de pieza | MMBTH10 | |
| Descripción | NPN SURFACE MOUNT VHF/UHF TRANSISTOR | |
| Fabricantes | Diodes Incorporated | |
| Logotipo |  |
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MMBTH10
NPN SURFACE MOUNT VHF/UHF TRANSISTOR
Features
• Designed for VHF/UHF Amplifier Applications and High
Output VHF Oscillators
• High Current Gain Bandwidth Product
• Ideal for Mixer and RF Amplifier Applications with
collector currents in the 100μA - 30 mA Range
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
• Qualified to AEC-Q101 Standards for High
Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Marking Information: K3H, K3Y; See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
C
BE
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α 0° 8°
All Dimensions in mm
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
TJ, TSTG
Value
30
25
3.0
50
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol Min Max Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
V(BR)CEO
25
⎯
V IC = 1mA, IB = 0
V(BR)CBO
30
⎯
V IC = 100μA, IE = 0
V(BR)EBO 3.0
⎯
V IE = 10μA, IC = 0
ICBO ⎯ 100 nA VCB = 25V, IE = 0
IEBO ⎯ 100 nA VEB = 2V, IC = 0
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
hFE
VCE(SAT)
VBE(SAT)
60
⎯
⎯
⎯
0.5
0.95
⎯ IC = 4mA, VCE = 10.0V
V IC = 4mA, IB = 400μA
V IC = 4mA, VCE = 10.0V
Current Gain-Bandwidth Product
Collector-Base Capacitance
Collector-Base Feedback Capacitance
Collector-Base Time Constant
fT
CCB
CRB
Rb’Cc
650
⎯
⎯
⎯
⎯
0.7
0.65
9
MHz
pF
pF
ps
VCE = 10V, f = 100MHz, IC = 4mA
VCB = 10V, f = 1.0MHz, IE = 0
VCB = 10V, f = 1.0MHz, IE = 0
VCB = 10V, f = 31.8MHz, IC = 4mA
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS31031 Rev. 12 - 2
1 of 3
www.diodes.com
MMBTH10
© Diodes Incorporated
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