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Motorola Semiconductors |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE1123/D
Bipolar Power PNP
Low Dropout Regulator
Transistor
The MJE1123 is an applications specific device designed to provide low–dropout
linear regulation for switching–regulator post regulators, battery powered systems
and other applications. The MJE1123 is fully specified in the saturation region and
exhibits the following main features:
• High Gain Limits Base–Drive Losses to only 1–2% of Circuit Output Current
• Gain is 100 Minimum at IC = 1.0 Amp, VCE = 7.0 Volts
• Excellent Saturation Voltage Characteristic, 0.2 Volts Maximum at 1.0 Amp
MAXIMUM RATINGS (TC = 25°C Unless Otherwise Noted.)
Rating
Symbol
Collector–Emitter Sustaining Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current — Peak
Base Current — Continuous
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCEO
VCB
VEB
IC
ICM
IB
PD
Operating and Storage Temperature
TJ, Tstg
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case°
Thermal Resistance — Junction to Ambient°
Maximum Lead Temperature for Soldering Purposes:
1/8″ from Case for 5 seconds
RθJC
RθJA
TL
Value
Unit
40 Vdc
50 Vdc
5.0 Vdc
4.0 Adc
8.0
4.0 Adc
75 Watts
0.6 W/°C
– 65 to +150 °C
°1.67°
°70°
275
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C Unless Otherwise Noted)
Characteristic
Symbol
OFF CHARACTERISTICS*
Collector–Emitter Sustaining Voltage (IC = 1.0 mA, I = 0)
Emitter–Base Voltage (IE = 100 µA)
Collector Cutoff Current
(VCE = 7.0 Vdc, IB = 0)
(VCE = 20 Vdc, IB = 0)
VCEO(sus)
VEBO
ICEO
ON CHARACTERISTICS*
Collector–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 20 mAdc)
(IC = 1.0 Adc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 120 mAdc)
(IC = 2.0 Adc, IB = 50 mAdc)
(IC = 2.0 Adc, IB = 120 mAdc)
(IC = 4.0 Adc, IB = 120 mAdc)
* Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%.
VCE(sat)
Min
40
7.0
—
—
—
—
—
—
—
—
MJE1123
PNP LOW DROPOUT
TRANSISTOR
4.0 AMPERES
40 VOLTS
CASE 221A–06
TO–220AB
Typ Max Unit
65 — Vdc
11 — Vdc
µAdc
— 100
— 250
Vdc
0.16 0.30
0.13 0.25
0.10 0.20
0.25 0.40
0.20 0.35
0.45 0.75
(continued)
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
MJE1123
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C Unless Otherwise Noted)
Characteristic
Symbol
Min Typ Max
ON CHARACTERISTICS* (continued)
Base–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 20 mAdc)
(IC = 2.0 Adc, IB = 50 mAdc)
(IC = 4.0 Adc, IB = 120 mAdc)
DC Current Gain
(IC = 1.0 Adc, VCE = 7.0 Vdc)
(IC = 1.0 Adc, VCE = 10 Vdc)
(IC = 2.0 Adc, VCE = 7.0 Vdc)
(IC = 2.0 Adc, VCE = 10 Vdc)
(IC = 4.0 Adc, VCE = 7.0 Vdc)
(IC = 4.0 Adc, VCE = 10 Vdc)
Base–Emitter On Voltage
(IC = 1.0 Adc, VCE = 1.0 Vdc)
(IC = 2.0 Adc, VCE = 1.0 Vdc)
(IC = 4.0 Adc, VCE = 1.0 Vdc)
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
* Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%.
VBE(sat)
— 0.77 0.95
— 0.87 1.20
— 1.00 1.40
hFE
100 170 225
100 180 225
75 120 170
80 140 180
45 75 100
45 79 100
VBE(on)
— 0.75 0.90
— 0.84 1.00
— 0.90 1.20
fT 5.0 11.5 —
100 1
TJ = 25°C
10
IB = 20 mA
50 mA
0.8
0.6
IC = 4 A, IB = 100 mA
100 mA
1
120 mA
0.1
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 1. Saturation Voltage versus Collector
Current as a Function of Base Drive
0.4
0.2
0
20
IC = 2 A, IB = 50 mA
IC = 1 A, IB = 20 mA
40 60 80
TJ, CASE TEMPERATURE (°C)
Figure 2. Saturation Voltage
versus Temperature
Unit
Vdc
—
Vdc
MHz
100
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
IB = 20 mA
50 mA
120 mA
TJ = 25°C
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 3. Base–Emitter Saturation Voltage
2
1.1
IC = 4 A, IB = 100 mA
1
0.9
IC = 2 A, IB = 50 mA
0.8
0.7
IC = 1 A, IB = 20 mA
0.6
20
40 60 80
TJ, CASE TEMPERATURE (°C)
100
Figure 4. Base–Emitter Saturation Voltage
versus Temperature
Motorola Bipolar Power Transistor Device Data
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