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PH1214-300M 반도체 회로 부품 판매점

Radar Pulsed Power Transistor/ 300 Watts/1.20-1.40 GHz/ 150 mS Pulse/ 10% Duty



Tyco Electronics 로고
Tyco Electronics
PH1214-300M 데이터시트, 핀배열, 회로
Radar Pulsed Power Transistor, 300 Watts,
1.20-1.40 GHz, 150 µS Pulse, 10% Duty
12/06/01
Rev. 0
Features
Q NPN Silicon Microwave Power Transistor
Q Common Base Configuration
Q Broadband Class C Operation
Q High Efficiency Interdigitated Geometry
Q Gold Metalization System
Q Internal Input and Output Impedance Matching
Q Hermetic Metal/Ceramic Package
Outline Drawing
Absolute Maximum Ratings @ 25 °C
Parameter
Symbol
Collector-Emitter Voltage VCES
Rating
90
Emitter-Base Voltage
VEBO
3.0
Collector Current (Peak)
IC
21.0
Total Power Dissipation
@ +45 °C
Storage Temperature
PTOT
TSTG
620
-65 to +200
Junction Temperature
Tj
200
Units
V
V
A
W
°C
°C
Electrical Characteristics @ 25 °C
Parameter
Symbol Min. Max. Units
Test Conditions
Collector-Emitter Breakdown
Voltage
Collector-Emitter Leakage
Current
Thermal Resistance
BVCES
ICES
RTH(JC)
90 -
V IC=80 mA
- 10 mA VCE=40 V
- .25 °C/W VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Output Power
PO 300 - W VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Power Gain
GP
8.75
-
dB VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Collector Efficiency
Input Return Loss
η
50 -
% VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
RL
10 -
dB VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Load Mismatch Tolerance
VSWR-T
-
2:1
- VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Load Mismatch Stability
VSWR-S - 1.5:1 - VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz


PH1214-300M 데이터시트, 핀배열, 회로
Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150µS Pulse, 10% Duty
Sample Test Data
(Broadband test fixture matched to 50 Ω.)
PH1214-300M
12/06/01
Rev. 0
P1dB Overdrive
VSWR-S
Freq. Pin
(GHz) (W)
Pout
(W)
Gain
(dB)
Gain
(dB)
Eff.
(%)
Ic (A)
Droop
(dB)
RL
(dB)
Pout
(W)
Po
(dB)
Gain Droop
(dB) (dB)
Eff.
(%)
1.5:1 2:1 2.5:1
1.2 40 406 10.06
63.2 16.1 0.1 18 451 0.46 9.52 0.38 59.8 S S S
1.3 40 355 9.48
59.3 15 0.04 15 412 0.65 9.12 0.32 58.2 S S S
0.82
1.4 40 335.8 9.24
58.4 14.4 0.06 16 378 0.51 8.75 0.35
56
S
SS
Note: Po(dB) is the difference between Pout at 1dB overdrive and Pout at Pin = 40W.
Power Output Curves
PH1214-300M Pout vs. Pin
500
400
300
1.2 GHz
1.3 GHz
1.4 GHz
200
100
0
0 10 20 30 40 50 60
Pin (W)
2




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PH1214-300M transistor

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PH1214-300M

Radar Pulsed Power Transistor/ 300 Watts/1.20-1.40 GHz/ 150 mS Pulse/ 10% Duty - Tyco Electronics