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Número de pieza | PH1214-25M | |
Descripción | Radar Pulsed Power Transistor - 25 Watts/ 1.20-1.40 GHz/ 150mS Pulse/ 10% Duty | |
Fabricantes | Tyco Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PH1214-25M (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Radar Pulsed Power Transistor 25 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty
PH1P2H11421-42-525MM
Radar Pulsed Power Transistor - 25 Watts,
1.20-1.40 GHz, 150µS Pulse, 10% Duty
Features
• NPN Silicon Microwave Power Transistor
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Interdigitated Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metalization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package
Description
M/A-COM’s PH1214-25M is a silicon bipolar NPN power
transistor designed for use in L-band, 1.2 - 1.4 GHz pulsed
radars such as air traffic control and long-range weather radars.
Designed for common-base, class C, broadband pulsed power
applications, the PH1214-25M can produce 25 watts of output
power with medium pulse length (150 µS) at 10 percent duty
cycle. The transistor is housed in a 2-lead, rectangular metal-
ceramic flange package, with internal input and output
impedance matching networks. In addition to L-band pulsed
radars, this high performance transistor can also be used in
pulsed digital communication systems.
Absolute Maximum Rating at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
@ +25°C
Storage Temperature
Junction Temperature
Symbol
VCES
VEBO
IC
PTOT
Rating
60
3.0
2.8
58
Tstg -65 to +200
Tj 200
Units
V
V
A
W
°C
°C
Outline Drawing1
Notes: (unless otherwise specified)
1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)
Broadband Test Fixture Impedance
F (GHz)
1.20
Z IF (Ω)
2.1 - j4.5
Z OF (Ω)
3.7 + j0.9
1.30
2.1 - j3.9
3.6 + j0.4
1.40
2.2 - j3.4
3.0 + j0.2
TEST FIXTURE
INPUT
CIRCUIT
TEST FIXTURE
OUTPUT
CIRCUIT
50Ω ZIF
ZOF 50Ω
Electrical Specifications at 25°C
Symbol
BVCES
ICES
RTH(JC)
PIN
GP
η
RL
VSWR-T
VSWR-S
Parameter
Collector-Emitter Breakdown
Collector-Emitter Breakdown
Thermal Resistance
Input Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stability
Test Conditions
IC = 25 mA
VCE = 40 V
VCC = 28 V, Po = 25 W, f = 1.2, 1.3, 1.4 GHz
VCC = 28 V, Po = 25 W, f = 1.2, 1.3, 1.4 GHz
VCC = 28 V, Po = 25 W, f = 1.2, 1.3, 1.4 GHz
VCC = 28 V, Po = 25 W, f = 1.2, 1.3, 1.4 GHz
VCC = 28 V, Po = 25 W, f = 1.2, 1.3, 1.4 GHz
VCC = 28 V, Po = 25 W, f = 1.2, 1.3, 1.4 GHz
VCC = 28 V, Po = 25 W, f = 1.2, 1.3, 1.4 GHz
Min Max Units
60 - V
- 2.5 mA
- 2.6 °C/W
- 2.8 W
9.5 - dB
50 - %
6 - dB
- 3:1 -
- 1.5:1 -
V2.00
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet PH1214-25M.PDF ] |
Número de pieza | Descripción | Fabricantes |
PH1214-25M | Radar Pulsed Power Transistor - 25 Watts/ 1.20-1.40 GHz/ 150mS Pulse/ 10% Duty | Tyco Electronics |
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