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EE-SY113 반도체 회로 부품 판매점

Compact Reflective Phototransistor Output



ETC 로고
ETC
EE-SY113 데이터시트, 핀배열, 회로

EE-SY110/113/171
Compact Reflective Phototransistor
Output
 Low-profiled model with an overall
height of only 3 mm (EE-SY171)
 Models with a circuit integrated into
molded housing provide special cost
advantages (EE-SY110/113)
 Model with a filter reduces effects of
external visible light (EE-SY113)
Ordering Information
Appearance Sensing method Sensing Sensing object
distance
Reflective
3.5 mm
4.4 mm
White paper with
reflection factor
of 90%
Output
Weight
configuration
Phototransistor 0.3 g
Part number
EE-SY171
Approx. 0.5 g EE-SY113
5 mm
Approx. 0.4 g EE-SY110
Specifications
 ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Item
Input
Output
Ambient temperature
Forward current
Pulse forward current
Reverse voltage
Collector-emitter voltage
Collector current
Collector dissipation
Operating
Storage
Symbol
IF
IFP
VR
VCEO
IC
PC
Topr
Tstg
Rated value
50 mA*
1 A**
4V
30 V
20 mA
100 mW*
-40°C to 85°C (-40°F to 185°F)
-40°C to 85°C (-40°F to 185°F)
*Refer to Engineering Data if the ambient temperature is not within the normal room temperature range.
**This value was measured with a pulse width of 10 µs and a repeating frequency of 100 Hz.


EE-SY113 데이터시트, 핀배열, 회로
EE-SY110/113/171
EE-SY110/113/171
 CHARACTERISTICS (TA = 25°C)
Item
Emitter
Receiver
Combination
Forward
voltage
Reverse
current
Peak emission
wavelength
Dark current
Peak spectral
sensitivity
wavelength
Light current
Leakage
current
Rising time**
Falling time**
Symbol
VF
IR
λp(L)
ID
λp(P)
IL
ILEAK
tr
tf
EE-SY110
Value
1.5 V max.
Condition
IF = 30 mA
EE-SY171
Value
1.5 V max.
Condition
IF = 30 mA
EE-SY113
Value
1.5 V max.
Condition
IF = 30 mA
10 µA max. VR = 4 V
10 µA max. VR = 4 V
10 µA max. VR = 4 V
940 nm typ. IF = 20 mA 940 nm typ. IF = 20 mA 940 nm typ. IF = 20 mA
200 nA max.
850 nm typ.
VCE = 10 V
0lx
VCE = 10 V
200 nA max.
850 nm typ.
VCE = 10 V
0lx
VCE = 10 V
200 nA max. VCE = 10 V
0lx
850 nm typ. VCE = 10 V
200 to
2,000 µA
2 µA max.
30 µs typ.
30 µs typ.
IF = 20 mA
VCE = 10 V
White paper
with a
reflection
factor of
90% at a
distance of
5 mm
IF = 20 mA
VCE = 10 V*
VCC = 5 V
RL = 1 k
IL = 1 mA
50 to 500 µA
IF = 20 mA
VCE = 10 V
White paper
with a
reflection
factor of
90% at a
distance of
3.5 mm
200 nA max.
30 µs typ.
30 µs typ.
IF = 20 mA
VCE = 10 V*
VCC = 5 V
RL = 1 k
IL = 1 mA
160 to
1,600 µA
2 µA max.
30 µs typ.
30 µs typ.
IF = 20 mA
VCE = 10 V
White paper
with a
reflection
factor of
90% at a
distance of
4.4 mm
IF = 20 mA
VCE = 10 V*
VCC = 5 V
RL = 1 k
IL = 1 mA
*The sensing object reflects no light.
**The following illustrations show the rising time, tr, and the falling time, tf.
Sensing object
Input 0
Input
t
VCC
Output 0
90%
10%
tr
tf
t
Output
RL
Engineering Data
Note: The operating conditions of the photomicrosensor must be within the absolute maximum rating ranges.
 TEMPERATURE CHARACTERISTICS
 INPUT CHARACTERISTICS (TYPICAL)
IF, Pc
TA = --30 °C
TA = +25 °C
TA = +70 °C
Ambient temperature TA (°C)
Forward voltage VF (V)




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EE-SY113 transistor

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