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Zetex Semiconductors |
ZX5T851G
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
SUMMARY
BVCEO = 60V : RSAT = 35m ; IC = 6A
DESCRIPTION
Packaged in the SOT223 outline this new 5th generation low saturation 60V
NPN transistor offers extremely low on state losses making it ideal for use in
DC-DC circuits and various driving and power management functions.
FEATURES
• Extremely low equivalent on-resistance; RSAT = 35mV at 6A
• 6 amps continuous current
• Up to 20 amps peak current
• Very low saturation voltages
• Excellent hFE characteristics up to 10 amps
APPLICATIONS
• Emergency lighting circuits
• Motor driving (including DC fans)
• Solenoid, relay and actuator drivers
• DC Modules
• Backlight Inverters
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
ZX5T851GTA
ZX5T851GTC
7” 12mm
13” embossed
QUANTITY PER
REEL
1000 units
4000 units
DEVICE MARKING
• X5T851
ISSUE 2 - SEPTEMBER 2003
1
SOT223
PINOUT
TOP VIEW
SEMICONDUCTORS
ZX5T851G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current (a)
Peak pulse current
Power dissipation at TA =25°C (a)
Linear derating factor
Power dissipation at TA =25°C (b)
Linear derating factor
Operating and storage temperature range
SYMBOL
BVCBO
BVCEO
BVEBO
IC
ICM
PD
PD
Tj, Tstg
LIMIT
150
60
7
6
20
3.0
24
1.6
12.8
-55 to +150
UNIT
V
V
V
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to ambient (a)
SYMBOL
R⍜JA
VALUE
42
UNIT
°C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
SEMICONDUCTORS
ISSUE 2 - SEPTEMBER 2003
2
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