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ZUMT618 반도체 회로 부품 판매점

NPN SILICON POWER(SWITCHING) TRANSISTOR



Zetex Semiconductors 로고
Zetex Semiconductors
ZUMT618 데이터시트, 핀배열, 회로
Super323SOT323 NPN SILICON
POWER(SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998
FEATURES
* 500mW POWER DISSIPATION
* IC CONT 1.25A
* 3A Peak Pulse Current
* Excellent HFE Characteristics Up to 3A (pulsed)
* Extremely Low Equivalent On Resistance; RCE(sat)
APPLICATIONS
* Corded telecoms.
* Boost functions in DC-DC converters
* Motor driver functions
ZUMT618
DEVICE TYPE
ZUMT618
COMPLEMENT
ZUMT718
PARTMARKING
RCE(sat)
T62 125mat1.25A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Operating and Storage Temperature Tj:Tstg
Range
VALUE
20
20
5
4
1.25
500
385 †
500 ‡
-55 to +150
UNIT
V
V
V
A
A
mA
mW
°C
† Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.


ZUMT618 데이터시트, 핀배열, 회로
ZUMT618
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
V(BR)CBO
Breakdown Voltage
20
V IC= 100µA
Collector-Emitter
V(BR)CEO
Breakdown Voltage
20
V IC= 10mA*
Emitter-Base
V(BR)EBO
Breakdown Voltage
5
V IE= 100µA
Collector Cut-Off
Current
ICBO
10 nA VCB= 16V
Emitter Cut-Off
Current
IEBO
10 nA VEB= 4V
Collector Emitter
Cut-Off Current
ICES
10 nA VCES= 16V
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
16.5 25
40 60
80 115
140 200
155 250
mV
mV
mV
mV
mV
955 1100 mV
IC= 100mA, IB=10mA*
IC= 250mA, IB= 10mA*
IC= 500mA, IB=10mA*
IC= 1A, IB=20mA*
IC= 1.25A, IB=50mA*
IC= 1.25A, IB=50mA*
Base-Emitter
Turn-On Voltage
VBE(on)
840 1100 mV IC= 1.25A, VCE= 2V*
Static Forward
Current Transfer
Ratio
hFE
Transition
Frequency
fT
200 420
300 450
200 380
100 300
40 180
20 60
210
MHz
IC= 10mA, VCE= 2V*
IC= 100mA, VCE= 2V*
IC= 500mA, VCE=2V*
IC= 1A, VCE=2 V*
IC= 2A, VCE=2V*
IC=4A, VCE= 2V*
IC= 50mA, VCE=10V
f= 100MHz
Output Capacitance Cobo
10 pF
Turn-On Time
t(on)
50 ns
Turn-Off Time
t(off)
275 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
VCB= 10V, f=1MHz
VCC=10 V, IC=1A
IB1=IB2=100mA




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ZUMT618 transistor

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