파트넘버.co.kr ZUMT617 데이터시트 PDF


ZUMT617 반도체 회로 부품 판매점

NPN SILICON POWER (SWITCHING) TRANSISTOR



Zetex Semiconductors 로고
Zetex Semiconductors
ZUMT617 데이터시트, 핀배열, 회로
Super323SOT323 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998
FEATURES
* 500mW POWER DISSIPATION
* IC CONT 1.5A
* 5A Peak Pulse Current
* Excellent HFE Characteristics Up To 5A (pulsed)
* Extremely Low Equivalent On Resistance; RCE(sat)
APPLICATIONS
* DC-DC converter boost functions
* Motor drive functions
ZUMT617
DEVICE TYPE
ZUMT617
COMPLEMENT
ZUMT717
PARTMARKING
RCE(sat)
T61 135mat 1.5A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C*
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Operating and Storage Temperature Tj:Tstg
Range
VALUE
15
15
5
5
1.5
200
385 †
500 ‡
-55 to +150
UNIT
V
V
V
A
A
mA
mW
°C
† Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.


ZUMT617 데이터시트, 핀배열, 회로
ZUMT617
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
15
V IC= 100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
15
V IC= 10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V IE= 100µA
Collector Cut-Off
Current
ICBO
10 nA VCB= 10V
Emitter Cut-Off
Current
IEBO
10 nA VEB= 4V
Collector Emitter
Cut-Off Current
ICES
10 nA VCES= 10V
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
16.5 20
40 55
75 100
150 200
205 245
mV
mV
mV
mV
mV
930 1100 mV
IC= 100mA, IB=10mA*
IC= 250mA, IB= 10mA*
IC= 500mA, IB=10mA*
IC= 1A, IB=10mA*
IC= 1.5A, IB=20mA*
IC= 1.5A, IB=20mA*
Base-Emitter Turn-On VBE(on)
Voltage
865 1100 mV IC= 1.5A, VCE= 2V*
Static Forward
Current Transfer
Ratio
hFE
Transition
Frequency
fT
200 420
300 450
250 390
200 300
75 150
30 75
180
MHz
IC= 10mA, VCE= 2V*
IC= 100mA, VCE= 2V*
IC= 500mA, VCE=2V*
IC= 1A, VCE=2 V*
IC= 3A, VCE=2V*
IC=5A, VCE= 2V*
IC= 50mA, VCE= 10V
f= 100MHz
Output Capacitance Cobo
15 pF
Turn-On Time
t(on)
50 ns
Turn-Off Time
t(off)
250 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
VCB= 10V, f=1MHz
VCC= 10V, IC= 1A
IB1=IB2=100mA




PDF 파일 내의 페이지 : 총 3 페이지

제조업체: Zetex Semiconductors

( zetexs )

ZUMT617 transistor

데이터시트 다운로드
:

[ ZUMT617.PDF ]

[ ZUMT617 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


ZUMT617

NPN SILICON POWER (SWITCHING) TRANSISTOR - Zetex Semiconductors



ZUMT618

NPN SILICON POWER(SWITCHING) TRANSISTOR - Zetex Semiconductors



ZUMT619

NPN SILICON POWER (SWITCHING) TRANSISTOR - Zetex Semiconductors