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Zetex Semiconductors |
Super323™ SOT323 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998
FEATURES
* 500mW POWER DISSIPATION
* IC CONT 1.5A
* 5A Peak Pulse Current
* Excellent HFE Characteristics Up To 5A (pulsed)
* Extremely Low Equivalent On Resistance; RCE(sat)
APPLICATIONS
* DC-DC converter boost functions
* Motor drive functions
ZUMT617
DEVICE TYPE
ZUMT617
COMPLEMENT
ZUMT717
PARTMARKING
RCE(sat)
T61 135mΩ at 1.5A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C*
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Operating and Storage Temperature Tj:Tstg
Range
VALUE
15
15
5
5
1.5
200
385 †
500 ‡
-55 to +150
UNIT
V
V
V
A
A
mA
mW
°C
† Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT617
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
15
V IC= 100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
15
V IC= 10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V IE= 100µA
Collector Cut-Off
Current
ICBO
10 nA VCB= 10V
Emitter Cut-Off
Current
IEBO
10 nA VEB= 4V
Collector Emitter
Cut-Off Current
ICES
10 nA VCES= 10V
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
16.5 20
40 55
75 100
150 200
205 245
mV
mV
mV
mV
mV
930 1100 mV
IC= 100mA, IB=10mA*
IC= 250mA, IB= 10mA*
IC= 500mA, IB=10mA*
IC= 1A, IB=10mA*
IC= 1.5A, IB=20mA*
IC= 1.5A, IB=20mA*
Base-Emitter Turn-On VBE(on)
Voltage
865 1100 mV IC= 1.5A, VCE= 2V*
Static Forward
Current Transfer
Ratio
hFE
Transition
Frequency
fT
200 420
300 450
250 390
200 300
75 150
30 75
180
MHz
IC= 10mA, VCE= 2V*
IC= 100mA, VCE= 2V*
IC= 500mA, VCE=2V*
IC= 1A, VCE=2 V*
IC= 3A, VCE=2V*
IC=5A, VCE= 2V*
IC= 50mA, VCE= 10V
f= 100MHz
Output Capacitance Cobo
15 pF
Turn-On Time
t(on)
50 ns
Turn-Off Time
t(off)
250 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
VCB= 10V, f=1MHz
VCC= 10V, IC= 1A
IB1=IB2=100mA
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