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Panasonic Semiconductor |
Transistors with built-in Resistor
UN2221/2222/2223/2224
Silicon NPN epitaxial planer transistor
For digital circuits
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
1
3
2
s Resistance by Part Number
Marking Symbol
q UN2221
9A
q UN2222
9B
q UN2223
9C
q UN2224
9D
(R1)
2.2kΩ
4.7kΩ
10kΩ
2.2kΩ
(R2)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
VCBO
50
Collector to emitter voltage VCEO
50
Collector current
IC 500
Total power dissipation
PT
200
Junction temperature
Tj
150
Storage temperature
Tstg –55 to +150
s Electrical Characteristics (Ta=25˚C)
Unit
V
V
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Internal Connection
R1
B
R2
C
E
Parameter
Symbol
Conditions
min typ max
Collector cutoff current
Emitter
cutoff
current
UN2221
UN2222
UN2223/2224
ICBO
ICEO
IEBO
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 6V, IC = 0
1
1
5
2
1
Collector to base voltage
Collector to emitter voltage
Forward
current
transfer
ratio
UN2221
UN2222
UN2223/2224
VCBO
VCEO
IC = 10µA, IE = 0
IC = 2mA, IB = 0
hFE VCE = 10V, IC = 100mA
50
50
40
50
60
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input
resis-
tance
UN2221/2224
UN2222
UN2223
VCE(sat)
VOH
VOL
fT
R1
IC = 100mA, IB = 5mA
VCC = 5V, VB = 0.5V, RL = 500Ω
VCC = 5V, VB = 3.5V, RL = 500Ω
VCB = 10V, IE = –50mA, f = 200MHz
4.9
(–30%)
0.25
0.2
200
2.2
4.7 (+30%)
10
Resistance ratio
R1/R2
UN2224
0.8 1.0 1.2
0.22
Unit
µA
µA
mA
V
V
V
V
V
MHz
kΩ
1
Transistors with built-in Resistor
Common characteristics chart
PT — Ta
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
UN2221/2222/2223/2224
Characteristics charts of UN2221
IC — VCE
300
Ta=25˚C
IB=1.0mA
250
0.9mA
0.8mA
200
0.7mA
150 0.6mA
0.5mA
100 0.4mA
0.3mA
50
0.2mA
0 0.1mA
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03 –25˚C
0.01
1 3 10 30 100 300 1000
Collector current IC (mA)
hFE — IC
400
VCE=10V
300 Ta=75˚C
200
25˚C
100
– 25˚C
0
1 3 10 30 100 300 1000
Collector current IC (mA)
Cob — VCB
24
f=1MHz
IE=0
Ta=25˚C
20
16
12
8
4
0
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
2
10000
3000
1000
IO — VIN
VO=5V
Ta=25˚C
300
100
30
10
3
1
0.4 0.6 0.8 1.0 1.2 1.4
Input voltage VIN (V)
VIN — IO
100
VO=0.2V
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3 1 3 10 30
Output current IO (mA)
100
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