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Panasonic Semiconductor |
Transistors with built-in Resistor
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Silicon NPN epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
3
2
s Resistance by Part Number
Marking Symbol (R1)
q UN2211
8A
10kΩ
q UN2212
8B
22kΩ
q UN2213
8C
47kΩ
q UN2214
8D
10kΩ
q UN2215
8E
10kΩ
q UN2216
8F
4.7kΩ
q UN2217
8H
22kΩ
q UN2218
8I
0.51kΩ
q UN2219
8K
1kΩ
q UN2210
8L
47kΩ
q UN221D
8M
47kΩ
q UN221E
8N
47kΩ
q UN221F
8O
4.7kΩ
q UN221K
8P
10kΩ
q UN221L
8Q
4.7kΩ
q UN221M
EL
2.2kΩ
q UN221N
EX
4.7kΩ
q UN221T
EZ
22kΩ
q UN221V
FD
2.2kΩ
q UN221Z
FF
4.7kΩ
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Internal Connection
R1
B
R2
C
E
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
50
50
100
200
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
Collector cutoff current
UN2211
ICBO
ICEO
VCB = 50V, IE = 0
VCE = 50V, IB = 0
UN2212/2214/221E/221D/221M/221N/221T
Emitter
cutoff
current
UN2213
UN2215/2216/2217/2210
UN221F/221K
UN2219
IEBO
VEB = 6V, IC = 0
UN2218/221L/221V
UN221Z
Collector to base voltage
Collector to emitter voltage
UN2211
VCBO
VCEO
IC = 10µA, IE = 0
IC = 2mA, IB = 0
50
50
35
UN2212/221E
60
Forward
current
transfer
ratio
UN2213/2214/221M
UN2215*/2216*/2217*/2210*
UN221F/221D/2219
hFE
UN2218/221K/221L
VCE = 10V, IC = 5mA
80
160
30
20
UN221N/221T
80
UN221V
60
Collector to emitter saturation voltage
VCE(sat)
UN221V
Output voltage high level
Output voltage low level
VOH
UN2213/221K
VOL
UN221D
UN221E
Transition frequency
fT
UN2211/2214/2215/221K
IC = 10mA, IB = 0.3mA
IC = 10mA, IB = 1.5mA
VCC = 5V, VB = 0.5V, RL = 1kΩ
VCC = 5V, VB = 2.5V, RL = 1kΩ
VCC = 5V, VB = 3.5V, RL = 1kΩ
VCC = 5V, VB = 10V, RL = 1kΩ
VCC = 5V, VB = 6V, RL = 1kΩ
VCB = 10V, IE = –2mA, f = 200MHz
4.9
UN2212/2217/221T
Input
resis-
tance
UN2213/221D/221E/2210
UN2216/221F/221L/221N/221Z
UN2218
R1
(–30%)
UN2219
UN221M/221V
typ max Unit
0.1 µA
0.5 µA
0.5
0.2
0.1
0.01
mA
1.0
1.5
2.0
0.4
V
V
460
400 —
200
0.25
0.04 0.25
V
V
0.2
0.2 V
0.2
0.2
150 MHz
10
22
47
4.7 (+30%) kΩ
0.51
1
2.2
* hFE rank classification (UN2215/2216/2217/2210)
Rank
Q
R
S
hFE
160 to 260
210 to 340
290 to 460
2
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