UN2154 반도체 회로 부품 판매점
Silicon PNP epitaxial planer transistor
|
|
 Panasonic Semiconductor |
Transistors with built-in Resistor
UN2154
Silicon PNP epitaxial planer transistor
For digital circuits
s Features
q High forward current transfer ratio hFE.
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
3
2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
–30
–30
–100
200
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Marking Symbol: EV
Internal Connection
R1(10kΩ)
B
R2
(47kΩ)
C
E
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VOH
VOL
R1
R1/R2
fT
Conditions
IC = –10µA, IE = 0
IC = –2mA, IB = 0
VCB = –30V, IE = 0
VCE = –30V, IB = 0
VEB = –3V, IC = 0
VCE = –10V, IC = –5mA
IC = –50mA, IB = – 0.33mA
VCC = –5V, VB = – 0.5V, RL = 1kΩ
VCC = –5V, VB = –2.5V, RL = 1kΩ
VCB = –10V, IE = 1mA, f = 200MHz
min
–30
–30
80
–4.9
–30%
typ max
– 0.1
– 0.5
– 0.1
– 0.5 –1.2
10
0.213
80
– 0.2
+30%
Unit
V
V
µA
µA
mA
—
V
V
V
kΩ
—
MHz
1
Transistors with built-in Resistor
PT — Ta
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
– 200
Ta=25˚C
–175
–150
–125
IB= –1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
–100
– 0.4mA
–75 –0.3mA
–50 –0.2mA
–25 –0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
UN2154
–100
VCE(sat) — IC
IC/IB=10
–10
–1
– 0.1
25˚C
Ta=75˚C
– 25˚C
– 0.01
–1
–10
–100
–1000
Collector current IC (mA)
hFE — IC
300
VCE= –10V
Ta=75˚C
250
25˚C
200
– 25˚C
150
100
50
0
–1
–10
–100
–1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
–1 –10 –100
Collector to base voltage VCB (V)
–10000
–1000
IO — VIN
VO= – 5V
Ta=25˚C
–100
–10
–1
– 0.4
–0.6 –0.8 –1 –1.2
Input voltage VIN (V)
–1.4
–100
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–1
– 0.1
– 0.01
– 0.1
–1
–10 –100
Output current IO (mA)
2
|
PDF 파일 내의 페이지 : 총 2 페이지
제조업체: Panasonic Semiconductor
( panasonic )
UN2154 transistor
데이터시트 다운로드 :
[ UN2154.PDF ]
[ UN2154 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
UN2154
Silicon PNP epitaxial planer transistor - Panasonic Semiconductor
UN2154
Silicon PNP epitaxial planer transistor - Panasonic Semiconductor