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UN211Z 반도체 회로 부품 판매점

Silicon PNP epitaxial planer transistor



Panasonic Semiconductor 로고
Panasonic Semiconductor
UN211Z 데이터시트, 핀배열, 회로
Transistors with built-in Resistor
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Silicon PNP epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
3
2
s Resistance by Part Number
Marking Symbol (R1)
q UN2111
6A
10k
q UN2112
6B
22k
q UN2113
6C
47k
q UN2114
6D
10k
q UN2115
6E
10k
q UN2116
6F
4.7k
q UN2117
6H
22k
q UN2118
6I
0.51k
q UN2119
6K
1k
q UN2110
6L
47k
q UN211D
6M
47k
q UN211E
6N
47k
q UN211F
6O
4.7k
q UN211H
6P
2.2k
q UN211L
6Q
4.7k
q UN211M
EI
2.2k
q UN211N
EW
4.7k
q UN211T
EY
22k
q UN211V
FC
2.2k
q UN211Z
FE
4.7k
(R2)
10k
22k
47k
47k
5.1k
10k
10k
22k
10k
10k
4.7k
47k
47k
47k
2.2k
22k
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Internal Connection
R1
B
R2
C
E
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
–50
–50
–100
200
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1


UN211Z 데이터시트, 핀배열, 회로
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
Collector cutoff current
UN2111
ICBO VCB = –50V, IE = 0
ICEO VCE = –50V, IB = 0
UN2112/2114/211E/211D/211M/211N/211T
Emitter
cutoff
current
UN2113
UN2115/2116/2117/2110
UN211F/211H
UN2119
IEBO
VEB = –6V, IC = 0
UN2118/211L/211V
UN211Z
Collector to base voltage
Collector to emitter voltage
UN2111
VCBO
VCEO
IC = –10mA, IE = 0
IC = –2mA, IB = 0
–50
–50
35
UN2112/211E
60
Forward
current
transfer
ratio
UN2113/2114/211M
UN2115*/2116*/2117*/2110*
UN2119/211F/211D/211H hFE
UN2118/211L
VCE = –10V, IC = –5mA
80
160
30
20
UN211N/211T
80
UN211V
6
UN211Z
60
Collector to emitter saturation voltage
VCE(sat)
UN211V
Output voltage high level
Output voltage low level
VOH
UN2113
VOL
UN211D
UN211E
Transition frequency
UN2111/2114/2115
fT
IC = –10mA, IB = – 0.3mA
IC = –10mA, IB = –1.5mA
VCC = –5V, VB = – 0.5V, RL = 1k
VCC = –5V, VB = –2.5V, RL = 1k
VCC = –5V, VB = –3.5V, RL = 1k
VCC = –5V, VB = –10V, RL = 1k
VCC = –5V, VB = –6V, RL = 1k
VCB = –10V, IE = 1mA, f = 200MHz
–4.9
UN2112/2117/211T
Input
resis-
tance
UN2113/2110/211D/211E
UN2116/211F/211L/211N/211Z R1
UN2118
(–30%)
UN2119
UN211H/211M/211V
typ max
– 0.1
– 0.5
– 0.5
– 0.2
– 0.1
– 0.01
–1.0
–1.5
–2.0
– 0.4
460
– 0.07
400
20
200
– 0.25
– 0.25
– 0.2
– 0.2
– 0.2
– 0.2
80
10
22
47
4.7 (+30%)
0.51
1
2.2
Unit
µA
µA
mA
V
V
V
V
V
V
MHz
k
* hFE rank classification (UN2115/2116/2117/2110)
Rank
Q
R
S
hFE
160 to 260
210 to 340
290 to 460
2




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UN211Z transistor

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