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UN206 반도체 회로 부품 판매점

Transistor array to drive the small motor



Panasonic Semiconductor 로고
Panasonic Semiconductor
UN206 데이터시트, 핀배열, 회로
Small Signal Transistor Arrays
UN206
Transistor array to drive the small motor
s Features
q Small and lightweight
q Low power consumption (low VCE(sat) transistor used)
q Protective diode incorporated (C-E monolithic)
q Low-voltage drive
s Applications
q Video cameras
q Cameras
q Portable CD players
q Small motor drive circuits in general for electronic equipment.
s Absolute Maximum Ratings (Ta=25±2˚C)
Parameter
Symbol
Ratings
Collector to base voltage
VCBO
±20
Collector to emitter voltage VCEO
±18
Emitter to base voltage
VEBO
±5
Collector current
IC ±1
Total power dissipation
PT*
0.5
Junction temperature
Tj
150
Storage temperature
Tstg –55 to +150
Note: ± marks used above: +: NPN part, –: PNP part
* TC = 25˚C only when the elements are active
Unit
V
V
V
A
W
˚C
˚C
Unit: mm
5.5±0.3
1.5±0.1
0.8
1 10
56
12°
45°
6°
0.5±0.2
7.7±0.3
12° 6°
SO–10C Package
Internal Connection
1
2
3
4
5
10
9
8
7
6
1


UN206 데이터시트, 핀배열, 회로
Small Signal Transistor Arrays
s Electrical Characteristics (Ta=25±2˚C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO
Collector cutoff current
ICER
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
Forward voltage (DC)
Forward current transfer ratio
VEBO
VF
hFE1
Forward current transfer ratio
hFE2
Collector to emitter saturation voltage VCE(sat)1
Collector to emitter saturation voltage VCE(sat)2
Transition frequency
fT
Collector output capacitance
Cob
(NPN) VCB = 20V, IE = 0
(PNP) VCB = –20V, IE = 0
(NPN) VCE = 18V, RBE = 100k
(PNP) VCE = –18V, RBE = 100k
(NPN) IC = 10µA, IE = 0
(PNP) IC = –10µA, IE = 0
(NPN) IC = 1mA, IB = 0
(PNP) IC = –1mA, IB = 0
(NPN) IE = 10µA, IC = 0
(PNP) IE = –10µA, IC = 0
IF = 1A
(NPN) VCE = 2V, IC = 0.5A*
(PNP) VCE = –2V, IC = – 0.5A*
(NPN) VCE = 2V, IC = 1.5A*
(PNP) VCE = –2V, IC = – 1.5A*
(NPN) IC = 0.3A, IB = 10mA
(PNP) IC = – 0.3A, IB = –10mA
(NPN) IC = 0.7A, IB = 10mA
(PNP) IC = – 0.7A, IB = –10mA
(NPN) VCB = 6V, IE = 50mA, f = 200MHz
(PNP) VCB = –6V, IE = –50mA, f = 200MHz
(NPN) VCB = 6V, IE = 0, f = 1MHz
(PNP) VCB = –6V, IE = 0, f = 1MHz
*Pulse measurement
min
20
–20
18
–18
5
–5
90
90
50
50
UN206
typ max Unit
1
µA
–1
10
µA
–10
V
V
V
1.5 V
360
360
0.2
– 0.2
V
0.6
– 0.6
V
150
MHz
200
20
pF
40
Characteristics charts of PNP transistor block
PT — Ta
0.6
0.5
IC — VCE
– 3.0
Ta=25˚C
– 2.5
0.4
0.3
0.2
0.1
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
– 2.0
–1.5
–1.0
– 0.5
IB= –14mA
–12mA
–10mA
– 8mA
– 6mA
– 4mA
– 2mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
IC — VBE
– 3.0
VCE= – 2V
– 2.5
– 2.0
25˚C
Ta=75˚C –25˚C
–1.5
–1.0
– 0.5
0
0 –0.4 –0.8 –1.2 –1.6 –2.0 –2.4
Base to emitter voltage VBE (V)
2




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UN206 transistor

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