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UN1231 반도체 회로 부품 판매점

Silicon NPN epitaxial planer transistor



Panasonic Semiconductor 로고
Panasonic Semiconductor
UN1231 데이터시트, 핀배열, 회로
Transistors with built-in Resistor
UN1231/1231A
Silicon NPN epitaxial planer transistor
For amplification of the low frequency
s Features
q High forward current transfer ratio hFE.
q M type mold package.
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to UN1231
base voltage UN1231A
VCBO
20
60
V
Collector to UN1231
emitter voltage UN1231A
VCEO
20
50
V
Collector current
IC 0.7 A
Peak collector current
ICP
1.5
A
Total power dissipation
PT*
1.0
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg –55 to +150
˚C
* Printed circuit board: Copper foil area of 1cm2 or more and thickness of
1.7mm for the collector portion.
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
M Type Mold Package
Internal Connection
R1(1k)
B
R2
(47k)
C
E
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to base voltage
UN1231
UN1231A
ICBO
ICEO
IEBO
VCBO
VCB = 15V, IE = 0
VCE = 15V, IB = 0
VEB = 14V, IC = 0
IC = 10µA, IE = 0
UN1231
Collector to emitter voltage
VCEO
UN1231A
IC = 1mA, IB = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Input resistance
Resistance ratio
hFE
VCE(sat)
R1
R1/R2
VCE = 10V, IC = 150mA*
IC = 100mA, IB = 5mA*
min typ max Unit
1 µA
10 µA
0.5 mA
20
V
60
20
V
50
800 2100
0.4 V
0.7 1 1.3 k
0.021
*Pulse measurement
1


UN1231 데이터시트, 핀배열, 회로
Transistors with built-in Resistor
PT — Ta
1.6
Copper foil area of 1cm2 or
1.4
more and thickness of
1.7mm for the collector
portion.
1.2
1.0
0.8
0.6
0.4
0.2
0
0 40 80 120 160
Ambient temperature Ta (˚C)
IC — VCE
1.2
Ta=25˚C
1.0 IB=1.2mA
1.0mA
0.8 0.8mA
0.6mA
0.6
0.4mA
0.4
0.2mA
0.2
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2400
2000
hFE — IC
VCE=10V
1600
Ta=75˚C
25˚C
1200
– 25˚C
800
400
0
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Cob — VCB
30
25
20
15
10
5
0
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
UN1231/1231A
VCE(sat) — IC
100
IC/IB=100
30
10
3
1 Ta=75˚C
0.3
25˚C
– 25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
2




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UN1231 transistor

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Silicon NPN epitaxial planer transistor - Panasonic Semiconductor



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