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UN1223 반도체 회로 부품 판매점

Silicon NPN epitaxial planer transistor



Panasonic Semiconductor 로고
Panasonic Semiconductor
UN1223 데이터시트, 핀배열, 회로
Transistors with built-in Resistor
UN1221/1222/1223/1224
Silicon NPN epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
s Resistance by Part Number
q UN1221
q UN1222
q UN1223
q UN1224
(R1)
2.2k
4.7k
10k
2.2k
(R2)
2.2k
4.7k
10k
10k
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
M Type Mold Package
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
500
600
150
–55 to +150
V
V
mA
mW
˚C
˚C
Internal Connection
R1
B
R2
C
E
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Emitter
cutoff
current
UN1221
UN1222
UN1223/1224
ICBO
ICEO
IEBO
Collector to base voltage
Collector to emitter voltage
Forward
current
transfer
ratio
UN1221
UN1222
UN1223/1224
VCBO
VCEO
hFE
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input
resis-
tance
UN1221/1224
UN1222
UN1223
VCE(sat)
VOH
VOL
fT
R1
Conditions
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 6V, IC = 0
IC = 10µA, IE = 0
IC = 2mA, IB = 0
VCE = 10V, IC = 100mA
IC = 100mA, IB = 5mA
VCC = 5V, VB = 0.5V, RL = 500
VCC = 5V, VB = 3.5V, RL = 500
VCB = 10V, IE = –50mA, f = 200MHz
min
50
50
40
50
60
4.9
(–30%)
typ max Unit
1 µA
1 µA
5
2 mA
1
V
V
0.25 V
V
0.2 V
200 MHz
2.2
4.7 (+30%) k
10
Resistance ratio
R1/R2
UN1224
0.8 1.0 1.2
0.22
1


UN1223 데이터시트, 핀배열, 회로
Transistors with built-in Resistor
Common characteristics chart
PT — Ta
800
700
600
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
UN1221/1222/1223/1224
Characteristics charts of UN1221
IC — VCE
300
Ta=25˚C
IB=1.0mA
250
0.9mA
0.8mA
200
0.7mA
150 0.6mA
0.5mA
100 0.4mA
0.3mA
50
0.2mA
0 0.1mA
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03 –25˚C
0.01
1 3 10 30 100 300 1000
Collector current IC (mA)
hFE — IC
400
VCE=10V
300 Ta=75˚C
200
25˚C
100
– 25˚C
0
1 3 10 30 100 300 1000
Collector current IC (mA)
Cob — VCB
24
f=1MHz
IE=0
Ta=25˚C
20
16
12
8
4
0
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
2
10000
3000
1000
IO — VIN
VO=5V
Ta=25˚C
300
100
30
10
3
1
0.4 0.6 0.8 1.0 1.2 1.4
Input voltage VIN (V)
VIN — IO
100
VO=0.2V
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3 1 3 10 30
Output current IO (mA)
100




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UN1223 transistor

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