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Panasonic Semiconductor |
Transistors with built-in Resistor
UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/
121D/121E/121F/121K/121L
Silicon NPN epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Resistance by Part Number
q UN1211
q UN1212
q UN1213
q UN1214
q UN1215
q UN1216
q UN1217
q UN1218
q UN1219
q UN1210
q UN121D
q UN121E
q UN121F
q UN121K
q UN121L
(R1)
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51kΩ
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
10kΩ
4.7kΩ
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
M Type Mold Package
Internal Connection
R1
B
R2
C
E
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
50
50
100
400
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1
UN1211/1212/1213/1214/1215/1216/1217/1218/
Transistors with built-in Resistor
1219/1210/121D/121E/121F/121K/121L
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
Collector cutoff current
UN1211
ICBO
ICEO
VCB = 50V, IE = 0
VCE = 50V, IB = 0
UN1212/1214/121E/121D
Emitter
cutoff
current
UN1213
UN1215/1216/1217/1210
UN121F/121K
IEBO
VEB = 6V, IC = 0
UN1219
UN1218/121L
Collector to base voltage
Collector to emitter voltage
UN1211
VCBO
VCEO
IC = 10µA, IE = 0
IC = 2mA, IB = 0
50
50
35
Forward
current
transfer
ratio
UN1212/121E
UN1213/1214
hFE
UN1215*/1216*/1217*/1210*
UN121F/121D/1219
VCE = 10V, IC = 5mA
60
80
160
30
UN1218/121K/121L
20
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
VCE(sat)
VOH
UN1213/121K
UN121D VOL
UN121E
Transition frequency
fT
UN1211/1214/1215/121K
IC = 10mA, IB = 0.3mA
VCC = 5V, VB = 0.5V, RL = 1kΩ
VCC = 5V, VB = 2.5V, RL = 1kΩ
VCC = 5V, VB = 3.5V, RL = 1kΩ
VCC = 5V, VB = 10V, RL = 1kΩ
VCC = 5V, VB = 6V, RL = 1kΩ
VCB = 10V, IE = –2mA, f = 200MHz
4.9
Input
resis-
tance
UN1212/1217
UN1213/121D/121E/1210
UN1216/121F/121L
UN1218
R1
(–30%)
UN1219
UN1211/1212/1213/121L
0.8
UN1214
0.17
Resis-
tance
ratio
UN1218/1219
UN121D
UN121E
R1/R2
0.08
UN121F
UN121K
typ max Unit
0.1 µA
0.5 µA
0.5
0.2
0.1
0.01 mA
1.0
1.5
2.0
V
V
460
0.25 V
V
0.2
0.2
V
0.2
0.2
80 MHz
10
22
47
(+30%) kΩ
4.7
0.51
1
1.0 1.2
0.21 0.25
0.1 0.12
4.7
2.14
0.47
2.13
* hFE rank classification (UN1215/1216/1217/1210)
Rank
Q
R
S
hFE
160 to 260
210 to 340
290 to 460
2
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