파트넘버.co.kr UN112X 데이터시트 PDF


UN112X 반도체 회로 부품 판매점

Silicon PNP epitaxial planer transistor



Panasonic Semiconductor 로고
Panasonic Semiconductor
UN112X 데이터시트, 핀배열, 회로
Transistors with built-in Resistor
UN1121/1122/1123/1124/112X/112Y
Silicon PNP epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
s Resistance by Part Number
q UN1121
q UN1122
q UN1123
q UN1124
q UN112X
q UN112Y
(R1)
2.2k
4.7k
10k
2.2k
0.27k
3.1k
(R2)
2.2k
4.7k
10k
10k
5k
4.6k
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
–50
–50
–500
600
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
M Type Mold Package
Internal Connection
R1
B
R2
C
E
1


UN112X 데이터시트, 핀배열, 회로
Transistors with built-in Resistor
UN1121/1122/1123/1124/112X/112Y
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
Collector cutoff current
UN112X
Collector cutoff current
UN112X
Emitter
cutoff
current
UN1121
UN1122/112X/112Y
UN1123/1124
ICBO
ICBO
ICEO
ICEO
IEBO
VCB = –50V, IE = 0
VCB = –50V, IE = 0
VCE = –50V, IB = 0
VCE = –50V, IB = 0
VEB = –6V, IC = 0
Collector to base voltage
Forward
current
transfer
ratio
UN1121
UN1122/112Y
UN1123/1124
UN112X
VCBO
IC = –10µA, IE = 0
hFE VCE = –10V, IC = –100mA
–50
40
50
60
20
Collector to emitter saturation voltage
UN112X
UN112Y
Output voltage high level
Output voltage low level
Transition frequency
UN1121
VCE(sat)
VCE(sat)
VCE(sat)
VOH
VOL
fT
IC = –100mA, IB = –5mA
IC = –10mA, IB = – 0.3mA
IC = –50mA, IB = –5mA
VCC = –5V, VB = – 0.5V, RL = 500
VCC = –5V, VB = –3.5V, RL = 500
VCB = –10V, IE = 50mA, f = 200MHz
–4.9
Input
resis-
tance
UN1122
UN1123
UN112X
R1
(–30%)
UN112Y
Resistance ratio
0.8
UN1124
UN112X R1/R2
UN112Y
typ max
–1
– 0.1
–1
– 0.5
–5
–2
–1
– 0.25
– 0.25
– 0.15
200
2.2
4.7
10
0.27
3.1
1.0
0.22
0.054
0.67
– 0.2
(+30%)
1.2
Unit
µA
µA
mA
V
V
V
V
MHz
k
Common characteristics chart
PT — Ta
800
600
400
200
0
0 40 80 120 160
Ambient temperature Ta (˚C)
2




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UN112X transistor

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관련 데이터시트


UN1121

Silicon PNP epitaxial planer transistor - Panasonic Semiconductor



UN1122

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UN1123

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UN1124

Silicon PNP epitaxial planer transistor - Panasonic Semiconductor



UN112X

Silicon PNP epitaxial planer transistor - Panasonic Semiconductor



UN112Y

Silicon PNP epitaxial planer transistor - Panasonic Semiconductor