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UN1113 반도체 회로 부품 판매점

Silicon PNP epitaxial planer transistor



Panasonic Semiconductor 로고
Panasonic Semiconductor
UN1113 데이터시트, 핀배열, 회로
Transistors with built-in Resistor
UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/
111D/111E/111F/111H/111L
Silicon PNP epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Resistance by Part Number
q UN1111
q UN1112
q UN1113
q UN1114
q UN1115
q UN1116
q UN1117
q UN1118
q UN1119
q UN1110
q UN111D
q UN111E
q UN111F
q UN111H
q UN111L
(R1)
10k
22k
47k
10k
10k
4.7k
22k
0.51k
1k
47k
47k
47k
4.7k
2.2k
4.7k
(R2)
10k
22k
47k
47k
5.1k
10k
10k
22k
10k
10k
4.7k
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
M Type Mold Package
Internal Connection
R1
B
R2
C
E
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
–50
–50
–100
400
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1


UN1113 데이터시트, 핀배열, 회로
UN1111/1112/1113/1114/1115/1116/1117/1118/
Transistors with built-in Resistor
1119/1110/111D/111E/111F/111H/111L
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
Collector cutoff current
UN1111
ICBO VCB = –50V, IE = 0
ICEO VCE = –50V, IB = 0
UN1112/1114/111E/111D
Emitter
cutoff
current
UN1113
UN1115/1116/1117/1110
UN111F/111H
UN1119
IEBO
VEB = –6V, IC = 0
UN1118/111L
Collector to base voltage
Collector to emitter voltage
UN1111
VCBO
VCEO
IC = –10µA, IE = 0
IC = –2mA, IB = 0
50
50
35
Forward
current
transfer
ratio
UN1112/111E
UN1113/1114
hFE
UN1115*/1116*/1117*/1110*
UN111F/111D/1119/111H
VCE = –10V, IC = –5mA
60
80
160
30
UN1118/111L
20
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
VCE(sat)
VOH
UN1113
UN111D VOL
UN111E
Transition frequency
UN1111/1114/1115
fT
IC = –10mA, IB = – 0.3mA
VCC = –5V, VB = – 0.5V, RL = 1k
VCC = –5V, VB = –2.5V, RL = 1k
VCC = –5V, VB = –3.5V, RL = 1k
VCC = –5V, VB = –10V, RL = 1k
VCC = –5V, VB = –6V, RL = 1k
VCB = –10V, IE = 2mA, f = 200MHz
–4.9
UN1112/1117
Input
resis-
tance
UN1113/1110/111D/111E
UN1116/111F/111L
UN1118
R1
(–30%)
UN1119
UN111H
UN1111/1112/1113/111L
0.8
UN1114
0.17
Resis-
tance
ratio
UN1118/1119
UN111D
UN111E
R1/R2
0.08
UN111F
UN111H
0.17
typ max Unit
– 0.1 µA
– 0.5 µA
– 0.5
– 0.2
– 0.1
– 0.01 mA
–1.0
–1.5
–2.0
V
V
460
– 0.25 V
V
– 0.2
– 0.2
– 0.2
V
– 0.2
80 MHz
10
22
47
4.7 (+30%) k
0.51
1
2.2
1.0 1.2
0.21 0.25
0.1 0.12
4.7
2.14
0.47
0.22 0.27
* hFE rank classification (UN1115/1116/1117/1110)
Rank
Q
R
S
hFE
160 to 260
210 to 340
290 to 460
2




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