(PDF) ULBM2TE Datasheet - NPN SILICON RF POWER TRANSISTOR

Número de pieza	ULBM2TE
Descripción	NPN SILICON RF POWER TRANSISTOR
Fabricantes	Advanced Semiconductor
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No Preview Available ! ULBM2TE NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2TE is Designed for FEATURES: • • • Omnigold™ Metalization System MAXIMUM RATINGS IC 0.40 A VCBO 36 V VCEO 16 V VEBO PDISS TJ TSTG θJC 4.0 V 5 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 35 OC/W PACKAGE STYLE TO-39GE B C ØA 45° ØD E F GH DIM MINIMUM inches / mm MAXIMUM inches / mm A .200 / 5.080 B .029 / 0.740 .045 / 1.140 C .028 / 0.720 .034 / 0.860 D .355 / 9.020 .370 / 9.370 E .315 / 8.010 .335 / 8.500 F .165 / 4.200 .180 / 4.570 G .500 / 12.700 .750 / 19.050 H .016 / 0.410 .020 / 0.508 ORDER CODE: ASI10679 CHARACTERISTICS TC = 25 OC SYMBOL NONETEST CONDITIONS BVCEO IC = 50 mA BVCES IC = 50 mA RBE = 10 Ω BVEBO IE = 1.0 mA ICBO VCB = 15 V hFE VCE = 5.0 V IC = 50 mA MINIMUM TYPICAL MAXIMUM 16 36 4.0 1.0 20 200 UNITS V V V mA --- Cob VCB = 12.5 V f = 1.0 MHz 10 pF PG VCE = 12.5 V POUT = 2.0 W f = 470 MHz 8.0 ηC 55 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 1 page

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PDF ULBM2TE Data sheet ( Hoja de datos )