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PDF UHBM45 Data sheet ( Hoja de datos )
| Número de pieza | UHBM45 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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UHBM45
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI UHBM45 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 9.0 A
VCBO
36 V
VCEO
18 V
VCES
36 V
VEBO
PDISS
TJ
TSTG
θJC
4.0 V
150 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
1.2 OC/W
PACKAGE STYLE .230 6L FLG
.040x45° C
4X .025 R
A
B
.115
.430 D
E
.125
I
F
G
H
2XØ.130
L
JK
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MINIMUM
inches / mm
.355 / 9.02
.115 / 2.92
.075 / 1.91
.225 / 5.72
.090 / 2.29
.720 / 18.29
.970 / 24.64
.355 / 9.02
.004 / 0.10
.120 / 3.05
.160 / 4.06
.230 / 5.84
MAXIMUM
inches / mm
.365 / 9.27
.125 / 3.18
.085 / 2.16
.235 / 5.97
.110 / 2.79
.730 / 18.54
.980 / 24.89
.365 / 9.27
.006 / 0.15
.130 / 3.30
.180 / 4.57
.260 / 6.60
ORDER CODE: ASI10667
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 50 mA
BVCES
IC = 50 mA
RBE = 10 Ω
BVEBO
IE = 10 mA
ICBO
VCB = 15 V
hFE VCE = 5.0 V
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
36
18
4.0
5
5 200
UNITS
V
V
V
mA
---
COB VCB = 12.5 V
f = 1.0 MHz
80
pF
PG
VCE = 12.5 V
POUT = 45 W
f = 836 MHz
4.7
ηC
35
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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| PDF Descargar | [ Datasheet UHBM45.PDF ] | |
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