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IL215A 반도체 회로 부품 판매점

PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER



Siemens Semiconductor Group 로고
Siemens Semiconductor Group
IL215A 데이터시트, 핀배열, 회로
IL215A/216A/217A
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
• FEATURES
• High Current Transfer Ratio, IF=1 mA
IL215A—20% Minimum
IL216A—50% Minimum
IL217A—100% Minimum
• Isolation Voltage, 2500 VACRMS
• Electrical Specifications Similar to
Standard 6 Pin Coupler
• Industry Standard SOIC-8 Surface
Mountable Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel Option
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
• Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL215A/216A/217A are optically coupled pairs
with a Gallium Arsenide infrared LED and a silicon
NPN phototransistor. Signal information, including
a DC level, can be transmitted by the device while
maintaining a high degree of electrical isolation
between input and output. The IL215A//216A/217A
comes in a standard SOIC-8 small outline package
for surface mounting which makes it ideally suited
for high density applications with limited space. In
addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.
The high CTR at low input current is designed for
low power consumption requirements such as
CMOS microprocessor interfaces.
Maximum Ratings
Emitter
Peak Reverse Voltage .....................................6.0 V
Continuous Forward Current ........................ 60 mA
Power Dissipation at 25°C............................90 mW
Derate Linearly from 25°C ......................1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage ...............30 V
Emitter-Collector Breakdown Voltage .................7 V
Collector-Base Breakdown Voltage ..................70 V
Power Dissipation ......................................150 mW
Derate Linearly from 25°C ......................2.0 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector).....................................280 mW
Derate Linearly from 25°C ......................3.3 mW/°C
Storage Temperature .................. –55°C to +150°C
Operating Temperature .............. –55°C to +100°C
Soldering Time at 260°C ............................. 10 sec.
Dimensions in inches (mm)
.120±.005
(3.05±.13)
.240
(6.10)
Pin One ID
.192±.005
(4.88±.13)
Anode 1
CL
.154±.005
(3.91±.13)
Cathode 2
NC 3
NC 4
.016 (.41)
.015±.002
(.38±.05)
40°
8 NC
7 Base
6 Collector
5 Emitter
7°
.058±.005
(1.49±.13)
.004 (.10)
.008 (.20)
.008 (.20)
5° max.
.125±.005
(3.18±.13)
.050 (1.27)
typ.
.021 (.53)
.020±.004
(.15±.10)
2 plcs.
R.010
(.25) max.
Lead
Coplanarity
±.0015 (.04)
max.
Characteristics (TA=25°C)
Symbol
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
VF
IR
CO
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Dark Current,
Collector-Emitter
BVCEO
BVECO
ICEOdark
Capacitance,
Collector-Emitter
CCE
Package
DC Current Transfer
Ratio
IL215A
IL216A
IL217A
CTRDC
Saturation Voltage,
Collector-Emitter
VCEsat
Isolation Test Voltage
Capacitance,
Input to Output
VIO
CIO
Resistance,
Input to Output
Switching Time
RIO
ton,toff
Min. Typ.
1.0
0.1
25
30
7
5
10
20 50
50 80
100 130
2500
0.5
100
3.0
Max. Unit
Condition
1.5 V
100 µA
pF
IF=1 mA
VR=6.0 V
VR=0
V
V
50 nA
pF
IC=10 µA
IE=10 µA
VCE=10 V
IF=0
VCE=0
% IF=10 mA,
VCE=5 V
0.5 IF=1 mA,
IC=0.1 mA
VACRMS
pF
G
µs IC=2 mA,
RE=100 ,
VCE=10 V
5–1
This document was created with FrameMaker 4.0.4


IL215A 데이터시트, 핀배열, 회로
Figure 1. Forward voltage versus forward current
1.4
1.3
Ta = -55°C
1.2
1.1 Ta = 25°C
1.0
0.9
Ta = 100°C
0.8
0.7
.1
1 10
If- Forward Current - mA
100
Figure 2. Normalized non-saturated and saturated
CTRce versus LED current
1. 5
Normalized to:
Vce = 10 V
IF = 10 mA
1.0 Ta = 25 °C
Vce = 5 V
0. 5
0. 0
.1
Vce = 0.4 V
1 10
IF - LED Current - mA
100
Figure 5. Collector-base photocurrent versus
LED current
1000
100
Ta = 25°C
Vcb = 9.3 V
10
1
.1
.1 1 10 100
IF - LED Current - mA
Figure 6. Collector-emitter leakage current versus
teCmoplleercatotur reemitter leakage current versus temperature
105
10 4
10 3
10 2
10 1 Vce = 10V
10 0 TYPICAL
10 -1
10
-2
-20
0 20 40 60 80 100
Ta - Ambient Temperature - °C
Figure 3. Collector-emitter current versus LED current
150
Ta = 25°C
100
Vce = 10 V
50
0
.1
Vce = 0.4 V
1 10
IF - LED Current - mA
100
Figure 7. Normalized saturated HFE versus base
current and temperature
2.0 70°C
1.5 25°C
50°C
Normalized to:
Ib = 20µA
Vce = 10 V
Ta = 25 °C
1.0
Vce = 0.4 V
0.5
0.0
1
10 100
Ib - Base Current - µA
1000
Figure 4. Normalized collector-base photocurrent
versus LED current
100
Normalized to:
Vcb = 9.3 V
10 IF = 1 mA
Ta = 25 °C
1
.1
.1 1 10 100
IF - LED Current - mA
Figure 8. Normalized non-saturated and saturated
CTRce versus LED current
2.0
Normalized to:
Ta = 25 °C
1.5 Vce = 5 V
IF = 1 mA
1.0
Vce = 5 V
0.5
0.0
.1
Vce = .4 V
1 10
IF - LED Current - mA
100
IL215A/216A/217A
5–2




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IL215A transistor

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