IL206A 반도체 회로 부품 판매점
SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLER
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 Siemens Semiconductor Group |
IL205A/206A/207/208A
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLER
FEATURES
• High Current Transfer Ratio, IF=10 mA,
VCE=5 V
IL205A, 40–80%
IL206A, 63–125%
IL207A, 100–200%
IL208A, 160–320%
• High BVCEO, 70 V
• Isolation Test Voltage, 2500 VACRMS
• Industry Standard SOIC-8 Surface Mountable
Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel Option—Suffix “T”
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Fapor Phase and
IR Reflow Soldering
• Underwriters Lab File #E52744 (Code
Letter P)
DESCRIPTION
The IL205A/206A/207A/208A are optically coupled
pairs with a Gallium Arsenide infrared LED and a
silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of electri-
cal isolation between input and output. The IL205/
6/7/8 come in a standard SOIC-8 small outline
package for surface mounting which makes them
ideally suited for high density applications with lim-
ited space. In addition to eliminating through-holes
requirements, this package conforms to standards
for surface mounted devices.
A specified minimum and maximum CTR allows a
narrow tolerance in the electrical design of the
adjacent circuits. The high BVCEO of 70 volts gives
a higher safety margin compared to the industry
standard 30 volts.
Maximum Ratings
Emitter
Peak Reverse Voltage......................................6.0 V
Continuous Forward Current..........................60 mA
Power Dissipation at 25°C ............................90 mW
Derate Linearly from 25°C ......................1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage ...............70 V
Emitter-Collector Breakdown Voltage .................7 V
Collector-Base Breakdown Voltage ..................70 V
Power Dissipation ......................................150 mW
Derate Linearly from 25°C ......................2.0 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector).....................................240 mW
Derate Linearly from 25°C ......................3.3 mW/°C
Storage Temperature ...................–55°C to +150°C
Operating Temperature ................–55°C to +100°C
Soldering Time at 260°C.............................. 10 sec.
Dimensions in inches (mm)
.120±.005
(3.05±.13)
.240
(6.10)
CL
Pin One ID
.192±.005
(4.88±.13)
.154±.005
(3.91±.13)
.016 (.41)
Anode/
Cathode 1
Cathode/
Anode
2
NC 3
NC 4
.015±.002
(.38±.05)
40°
8 NC
7 Base
6 Collector
5 Emitter
7°
.058±.005
(1.49±.13)
.004 (.10)
.008 (.20)
.008 (.20)
5° max.
.125±.005
(3.18±.13)
.050 (1.27)
typ.
.021 (.53)
.020±.004
(.15±.10)
2 plcs.
R.010
(.25) max.
Lead
Coplanarity
±.0015 (.04)
max.
Characteristics (TA=25°C)
Sym Min. Typ. Max. Unit
Condition
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
VF
IR
CO
1.3 1.5 V
0.1 100 µA
25 pF
IF=±10 mA
VR=6.0 V
VR=0
Breakdown Voltage
Collector-Emitter
Emitter-Collector
BVCEO 70
BVECO 7
10
V
V
Leakage Current, ICEO
Collector-Emitter
5 50 nA
IC=100 mA
IE=100 µA
VCE=10 V
Package
DC Current
Transfer
IL205A
IL206A
IL207A
IL208A
CTRDC
40
63
100
100
%
80
125
200
320
IF=±10 mA,
VCE=5 V
DC Current
Transfer
IL205A
IL206A
IL207A
IL208A
CTRDC
13
22
34
56
25
40
60
95
% IF=±1 mA,
VCE=5 V
Saturation Voltage,
Collector-Emitter
Isolation Test
Voltage
VCEsat
VIO
2500
0.4 IC=2.0 mA,
IF=10 mA,
VACRMS
Equivalent DC
Isolation Voltage
3535
VDC
Capacitance,
Input to Output
CIO
0.5 pF
Resistance,
Input to Output
RIO
100 GΩ
Switching Time
tON,
3.0
µs IC=2.0 mA,
tOFF RE=100 Ω,
VCE=10 V
5–1
Figure 1. Forward voltage versus forward current
1.4
1.3 Ta = -55°C
1.2
1.1 Ta = 25°C
1.0
0.9 Ta = 85°C
0.8
0.7
.1
1 10
IF - Forward Current - mA
100
Figure 2. Normalized non-saturated and saturated
CTRce versus LED current
1.5
Normalized to:
Vce = 10 V
IF = 10 mA
Vce = 5 V
1.0 Ta = 25 °C
Figure 5. Normalized collector-base photocurrent ver-
sus LED current
10
Normalized to:
Vcb = 9.3 V
1
IF = 10 mA
Ta = 25 °C
.1
.01
.1
1 10
IF - LED Current - mA
100
Figure 6. Collector-emitter photocurrent versus LED
current
1000
Ta = 25°C
Vcb = 9.3 V
100
0.5 10
0.0
.1
Vce = 0.4 V
1 10
IF - LED Current - mA
100
Figure 3. Collector-emitter current versus LED current
150
Ta = 25°C
Vce = 10 V
100
50
0
.1
Vce = 0.4 V
1 10
IF - LED Current - mA
100
Figure 4. Normalized collector-base photocurrent ver-
sus LED current
100
Normalized to:
Vcb = 9.3 V
10 IF = 1 mA
Ta = 25 °C
1
.1
.1 1 10 100
IF - LED Current - mA
1
.1
.1 1 10 100
IF - LED Curr ent - mA
Figure 7. Collector-emitter photocurrent versus LED
current
105
10 4
10 3
10 2
10 1 Vce = 10V
10 0 TYPICAL
10 -1
10 -2
-20
0 20 40 60 80 100
Ta - Ambient Temperature - °C
Figure 8. Base current versus If and HFE
2.0 70°C
1.5 25°C
50°C
Normalized to:
Ib = 20µA
Vce = 10 V
Ta = 25 °C
1.0
Vce = 0.4 V
0.5
0.0
1
10 100
Ib - Base Current - µA
1000
IL205A/206A/207A/208A
5–2
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( siemens )
IL206A transistor
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