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PDF IFN146 Data sheet ( Hoja de datos )
| Número de pieza | IFN146 | |
| Descripción | Dual N-Channel Silicon Junction Field-Effect Transistor | |
| Fabricantes | InterFET Corporation | |
| Logotipo |  |
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01/99
D-5
IFN146
Dual N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise Audio Amplifier
¥ Equivalent to Japanese 2SK146
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 40 V
10 mA
375 mW
3 mW/°C
– 65°C to 200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source Input Capacitance
Common Source Reverse
Transfer Capacitance
Noise Figure
Differential Gate Source Voltage
V(BR)GSS
IGSS
VGS(OFF)
IDSS
IFN146
Min Typ Max
– 40
–1
–1
– 0.3 – 1.2
30
Process NJ450
Unit Test Conditions
V IG = – 1 µA, VDS = ØV
nA VGS = – 30V, VDS = ØV
µA VGS = – 30V, VDS = ØV
V VDS = 10V, ID = 1 µA
mA VDS = 10V, VGS = ØV
TA = 150°C
gfs 30 40
mS
VDS = 10V, VGS = ØV
IDSS = 5 mA
Ciss 75 pF VDS = 10V, VGS = ØV
Crss 15 pF VDS = 10V, ID = ØA
NF
|VGS1– VGS2|
1
dB
VDS = 10V, ID = 5 mA
RG = 100Ω
20 mV VDS = 10V, ID = 5 mA
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
TOÐ71 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Gate, 3 Drain,
5 Source, 6 Gate, 7 Drain
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet IFN146.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IFN146 | Dual N-Channel Silicon Junction Field-Effect Transistor | InterFET Corporation |
| IFN147 | N-Channel Silicon Junction Field-Effect Transistor | InterFET Corporation |
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