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Infineon Technologies AG |
PNP Silicon High Voltage Transistor
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: PZTA42 (NPN)
PZTA92
4
3
2
1 VPS05163
Type
PZTA92
Marking
PZTA 92
1=B
Pin Configuration
2=C 3=E 4=C
Package
SOT223
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Base current
Total power dissipation, TS = 124 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
IC
IB
Ptot
Tj
Tstg
300
300
5
500
100
1.5
150
-65 ... 150
Thermal Resistance
Junction - soldering point 1)
RthJS
17
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
W
°C
K/W
1 Dec-12-2001
PZTA92
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base breakdown voltage
IC = 100 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 200 V, IE = 0
Collector cutoff current
VCB = 200 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 3 V, IC = 0
DC current gain 1)
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
V(BR)CEO 300
-
-V
V(BR)CBO 300
-
-
V(BR)EBO 5 - -
ICBO
- - 250 nA
ICBO
- - 20 µA
IEBO
- - 100 nA
hFE -
25 -
-
40 -
-
25 -
-
Collector-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
Base-emitter saturation voltage 1)
IC = 20 mA, IB = 2 mA
VCEsat - - 0.5 V
VBEsat - - 0.9
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 20 V, f = 1 MHz
fT - 100 - MHz
Ccb - - 6 pF
1) Pulse test: t < 300s; D < 2%
2
Dec-12-2001
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