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PZTA92 반도체 회로 부품 판매점

PNP Silicon High Voltage Transistor



Infineon Technologies AG 로고
Infineon Technologies AG
PZTA92 데이터시트, 핀배열, 회로
PNP Silicon High Voltage Transistor
 High breakdown voltage
 Low collector-emitter saturation voltage
 Complementary type: PZTA42 (NPN)
PZTA92
4
3
2
1 VPS05163
Type
PZTA92
Marking
PZTA 92
1=B
Pin Configuration
2=C 3=E 4=C
Package
SOT223
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Base current
Total power dissipation, TS = 124 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
IC
IB
Ptot
Tj
Tstg
300
300
5
500
100
1.5
150
-65 ... 150
Thermal Resistance
Junction - soldering point 1)
RthJS
17
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
W
°C
K/W
1 Dec-12-2001


PZTA92 데이터시트, 핀배열, 회로
PZTA92
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base breakdown voltage
IC = 100 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 200 V, IE = 0
Collector cutoff current
VCB = 200 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 3 V, IC = 0
DC current gain 1)
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
V(BR)CEO 300
-
-V
V(BR)CBO 300
-
-
V(BR)EBO 5 - -
ICBO
- - 250 nA
ICBO
- - 20 µA
IEBO
- - 100 nA
hFE -
25 -
-
40 -
-
25 -
-
Collector-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
Base-emitter saturation voltage 1)
IC = 20 mA, IB = 2 mA
VCEsat - - 0.5 V
VBEsat - - 0.9
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 20 V, f = 1 MHz
fT - 100 - MHz
Ccb - - 6 pF
1) Pulse test: t < 300s; D < 2%
2
Dec-12-2001




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PZTA92 transistor

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