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PDF PZTA64 Data sheet ( Hoja de datos )
| Número de pieza | PZTA64 | |
| Descripción | PNP Darlington Transistor | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Discrete POWER & Signal
Technologies
MPSA64
MMBTA64
PZTA64
C
BE
TO-92
C
SOT-23
Mark: 2V
E
B
C
SOT-223
C
B
E
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
VCBO
Collector-Emitter Voltage
Collector-Base Voltage
30
30
VEBO
Emitter-Base Voltage
10
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.2
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
MPSA64
*MMBTA64
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
625 350
5.0 2.8
83.3
RθJA Thermal Resistance, Junction to Ambient
200
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**PZTA64
1,000
8.0
125
Units
mW
mW /°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
A64, Rev A
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet PZTA64.PDF ] | |
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