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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
PZT3904
NPN switching transistor
Product specification
Supersedes data of 1997 Jul 04
1999 Apr 14
Philips Semiconductors
NPN switching transistor
Product specification
PZT3904
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• High-speed saturated switching.
DESCRIPTION
NPN switching transistor in a SOT223 plastic package.
PNP complement: PZT3906.
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
handbook, halfpage
4
2, 4
1
1
Top view
2
3
MAM287
3
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
60
40
6
200
300
100
1.05
+150
150
+150
UNIT
V
V
V
mA
mA
mA
W
°C
°C
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 14
2
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