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PZT2907A 반도체 회로 부품 판매점

PNP Silicon Epitaxial Transistor



ON Semiconductor 로고
ON Semiconductor
PZT2907A 데이터시트, 핀배열, 회로
PZT2907A
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT-223
package which is designed for medium power surface mount
applications.
Features
NPN Complement is PZT2222AT1
The SOT-223 Package can be Soldered Using Wave or Reflow
SOT-223 Package Ensures Level Mounting, Resulting in Improved
Thermal Conduction, and Allows Visual Inspection of Soldered
Joints. The Formed Leads Absorb Thermal Stress during Soldering
Eliminating the Possibility of Damage to the Die
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector Emitter Voltage
VCEO
60
Vdc
Collector Base Voltage
VCBO
60
Vdc
Emitter Base Voltage
VEBO
5.0
Vdc
Collector Current Continuous
IC 600 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
TA = 25°C
Thermal Resistance JunctiontoAmbient
(Note 1)
Lead Temperature for Soldering,
0.0625from case
Time in Solder Bath
Operating and Storage Temperature Range
Symbol
PD
RqJA
TL
TJ, Tstg
1. FR4 with 1 oz and 713 mm2 of copper area.
Max
1.5
12
83.3
260
10
65 to
+150
Unit
W
mW/°C
°C/W
°C
Sec
°C
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
4
123
SOT223
CASE 318E
STYLE 1
COLLECTOR
2, 4
1
BASE
3
EMITTER
MARKING DIAGRAM
AYW
P2F G
G
1
P2F = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
PZT2907AT1G SOT223 1,000 / Tape & Reel
(PbFree)
SPZT2907AT1G SOT223 1,000 / Tape & Reel
(PbFree)
PZT2907AT3G SOT223 4,000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 Rev. 10
1
Publication Order Number:
PZT2907AT1/D


PZT2907A 데이터시트, 핀배열, 회로
PZT2907A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
CollectorBase Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
Vdc
CollectorEmitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
60
Vdc
EmitterBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
CollectorBase Cutoff Current
(VCB = 50 Vdc, IE = 0)
ICBO
nAdc
− −10
CollectorEmitter Cutoff Current
(VCE = 30 Vdc, VBE = 0.5 Vdc)
ICEX
nAdc
− −50
BaseEmitter Cutoff Current
(VCE = 30 Vdc, VBE = 0.5 Vdc)
IBEX
nAdc
− −50
ON CHARACTERISTICS (Note 2)
DC Current Gain
((IICC
=
=
0.1
1.0
mAdc,
mAdc,
VVCCEE
=
=
10
10
Vdc)
Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
((IICC
=
=
150
500
mAdc,
mAdc,
VVCCEE
=
=
10
10
Vdc)
Vdc)
hFE
75
100
100
100 300
50
Collector-Emitter Saturation Voltages
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base-Emitter Saturation Voltages
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
DYNAMIC CHARACTERISTICS
VCE(sat)
VBE(sat)
Vdc
− −0.4
− −1.6
Vdc
− −1.3
− −2.6
Current-Gain Bandwidth Product
(IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT 200
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cc
pF
8.0
Input Capacitance
(VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz)
Ce
pF
30
SWITCHING TIMES
Turn-On Time
Delay Time
Rise Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = 15 mAdc)
Turn-Off Time
Storage Time
Fall Time
(VCC = 6.0 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
ton
td
tr
toff
ts
tf
45 ns
10
40
100 ns
80
30
http://onsemi.com
2




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