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ON Semiconductor |
PZT2907A
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT-223
package which is designed for medium power surface mount
applications.
Features
• NPN Complement is PZT2222AT1
• The SOT-223 Package can be Soldered Using Wave or Reflow
• SOT-223 Package Ensures Level Mounting, Resulting in Improved
Thermal Conduction, and Allows Visual Inspection of Soldered
Joints. The Formed Leads Absorb Thermal Stress during Soldering
Eliminating the Possibility of Damage to the Die
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector −Emitter Voltage
VCEO
−60
Vdc
Collector −Base Voltage
VCBO
−60
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC −600 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
TA = 25°C
Thermal Resistance Junction−to−Ambient
(Note 1)
Lead Temperature for Soldering,
0.0625″ from case
Time in Solder Bath
Operating and Storage Temperature Range
Symbol
PD
RqJA
TL
TJ, Tstg
1. FR−4 with 1 oz and 713 mm2 of copper area.
Max
1.5
12
83.3
260
10
−65 to
+150
Unit
W
mW/°C
°C/W
°C
Sec
°C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
4
123
SOT−223
CASE 318E
STYLE 1
COLLECTOR
2, 4
1
BASE
3
EMITTER
MARKING DIAGRAM
AYW
P2F G
G
1
P2F = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
PZT2907AT1G SOT−223 1,000 / Tape & Reel
(Pb−Free)
SPZT2907AT1G SOT−223 1,000 / Tape & Reel
(Pb−Free)
PZT2907AT3G SOT−223 4,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 10
1
Publication Order Number:
PZT2907AT1/D
PZT2907A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(IC = −10 mAdc, IE = 0)
V(BR)CBO
− 60
−
Vdc
−
Collector−Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
− 60
−
Vdc
−
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
− 5.0
−
Vdc
−
Collector−Base Cutoff Current
(VCB = − 50 Vdc, IE = 0)
ICBO
−
nAdc
− −10
Collector−Emitter Cutoff Current
(VCE = − 30 Vdc, VBE = 0.5 Vdc)
ICEX
−
nAdc
− −50
Base−Emitter Cutoff Current
(VCE = − 30 Vdc, VBE = − 0.5 Vdc)
IBEX
−
nAdc
− −50
ON CHARACTERISTICS (Note 2)
DC Current Gain
((IICC
=
=
− 0.1
−1.0
mAdc,
mAdc,
VVCCEE
=
=
−10
−10
Vdc)
Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
((IICC
=
=
−150
− 500
mAdc,
mAdc,
VVCCEE
=
=
−10
−10
Vdc)
Vdc)
hFE
75
−
−
−
100 −
−
100 −
−
100 − 300
50 −
−
Collector-Emitter Saturation Voltages
(IC = −150 mAdc, IB = −15 mAdc)
(IC = − 500 mAdc, IB = −50 mAdc)
Base-Emitter Saturation Voltages
(IC = −150 mAdc, IB = −15 mAdc)
(IC = − 500 mAdc, IB = − 50 mAdc)
DYNAMIC CHARACTERISTICS
VCE(sat)
VBE(sat)
−
−
−
−
Vdc
− −0.4
− −1.6
Vdc
− −1.3
− −2.6
Current-Gain − Bandwidth Product
(IC = − 50 mAdc, VCE = − 20 Vdc, f = 100 MHz)
fT 200 −
MHz
−
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Cc
−
pF
− 8.0
Input Capacitance
(VEB = − 2.0 Vdc, IC = 0, f = 1.0 MHz)
Ce
−
pF
− 30
SWITCHING TIMES
Turn-On Time
Delay Time
Rise Time
(VCC = − 30 Vdc, IC = −150 mAdc,
IB1 = −15 mAdc)
Turn-Off Time
Storage Time
Fall Time
(VCC = − 6.0 Vdc, IC = −150 mAdc,
IB1 = IB2 = −15 mAdc)
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ton
td
tr
toff
ts
tf
−
−
−
−
−
−
− 45 ns
− 10
− 40
− 100 ns
− 80
− 30
http://onsemi.com
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