파트넘버.co.kr QRB1133 데이터시트 PDF


QRB1133 반도체 회로 부품 판매점

PHOTOTRANSISTOR REFLECTIVE OBJECT SENSORS



Fairchild Semiconductor 로고
Fairchild Semiconductor
QRB1133 데이터시트, 핀배열, 회로
PHOTOTRANSISTOR
REFLECTIVE OBJECT SENSORS
QRB1133 QRB1134
PACKAGE DIMENSIONS
24.0 (609.60)
MIN #26 AWG
(A)
(K)
0.420 (10.67)
0.328 (8.33)
0.150 (3.81)
NOM
0.226 (5.74)
0.373 (9.47)
0.703 (17.86)
(E)
(C)
0.020 (0.51)
4X
0.300 (7.62)
0.150 (3.81)
MIN
0.603 (15.32)
FUNCTION
(C) COLLECTOR
(E) EMITTER
(K) CATHODE
(A) ANODE
WIRE COLOR
WHITE
BLUE
GREEN
ORANGE
REFLECTIVE
SURFACE
0.210 (5.33)
SCHEMATIC
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
AK
CE
DESCRIPTION
The QRB1133/1134 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converg-
ing optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective
object passes within its field of view. The area of the optimum response approximates a circle .200” in diameter.
FEATURES
• Phototransistor output
• High Sensitivity
• Low cost plastic housing
• #26 AWG, 24 inch PVC wire termination
• Infrared transparent plastic covers for dust protection
2001 Fairchild Semiconductor Corporation
DS300351 7/02/01
1 OF 4
www.fairchildsemi.com


QRB1133 데이터시트, 핀배열, 회로
PHOTOTRANSISTOR
REFLECTIVE OBJECT SENSORS
QRB1133 QRB1134
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(2,3,4)
Soldering Temperature (Flow)(2,3)
EMITTER
Continuous Forward Current
Reverse Voltage
Power Dissipation(1)
SENSOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Power Dissipation(1)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
IF
VR
PD
VCEO
VECO
IC
PD
Rating
-40 to +85
-40 to +85
240 for 5 sec
260 for 10 sec
50
5
100
30
50
20
100
NOTES
1. Derate power dissipation linearly 1.67 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) minimum from housing.
5. D is the distance from the assembly face to the reflective surface.
6. Measured using an Eastman Kodak neutral test card with 90% diffused reflecting surface.
7. Cross talk is the photo current measured with current to the input diode and no reflecting surface.
ELECTRICAL / OPTICAL CHARACTERISTICS (TA = 25°C)
PARAMETER
TEST CONDITIONS
SYMBOL
EMITTER
Forward Voltage
IF = 40 mA
VF
Reverse Current
Peak Emission Wavelength
SENSOR
Collector-Emitter Breakdown Voltage
VR = 2.0 V
IF = 20 mA
IC = 1 mA
IR
!PE
BVCEO
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
COUPLED
IE = 0.1 mA
VCE = 10 V, IF = 0 mA
BVECO
ICEO
On-state Collector Current
QRB1133
IF = 40 mA, VCE = 5 V
D = .150”(5,6)
IC(ON)
QRB1134
Collector-Emitter
Saturation Voltage
IF = 20 mA, IC = 0.5 mA
VCE (SAT)
Rise Time
Fall Time
Cross Talk
VCE = 5 V, RL = 100 "
IC(ON) = 5 mA
IF = 40 mA, VCE = 5 V(7)
tr
tf
ICX
www.fairchildsemi.com
2 OF 4
MIN
30
5
0.20
0.60
TYP
940
8
8
Units
°C
°C
°C
°C
mA
V
mW
V
V
mA
mW
MAX
1.7
100
100
UNITS
V
µA
nm
V
V
nA
mA
0.4 V
µs
1.00 µA
7/02/01 DS300351




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QRB1133 transistor

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