|
Toshiba Semiconductor |
TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type
(PCT process) (Bias Resistor built-in Transistor)
RN47A4
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
RN47A4
Unit: mm
· Two devices are incorporated into an Ultra-Super-Mini (5 pin)
package.
· Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Equivalent Circuit and Bias Resistor Values
Q1 Q2
CC
R1
B
R1
B
E
Q1
R1: 47 kΩ, R2: 47 kΩ
Q2
R1: 10 kΩ, R2: 47 kΩ
Q1: RN1104F
Q2: RN2107F
Marking
54
E
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: g (typ.)
Equivalent Circuit (top view)
54
24
Q2
Q1
123
123
1 2002-01-30
Maximum Ratings (Ta = 25°C) (Q1)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
50
50
10
100
Maximum Ratings (Ta = 25°C) (Q2)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
-50
-50
-6
-100
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector power dissipation
Junction temperature
Storage temperature range
Note: Total rating
Symbol
PC (Note)
Tj
Tstg
Rating
200
150
-55~150
Unit
V
V
V
mA
Unit
V
V
V
mA
Unit
mW
°C
°C
RN47A4
2 2002-01-30
|