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RN47A4 반도체 회로 부품 판매점

TOSHIBA Transistor Silicon NPNPNP Epitaxial Type



Toshiba Semiconductor 로고
Toshiba Semiconductor
RN47A4 데이터시트, 핀배열, 회로
TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type
(PCT process) (Bias Resistor built-in Transistor)
RN47A4
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
RN47A4
Unit: mm
· Two devices are incorporated into an Ultra-Super-Mini (5 pin)
package.
· Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Equivalent Circuit and Bias Resistor Values
Q1 Q2
CC
R1
B
R1
B
E
Q1
R1: 47 k, R2: 47 k
Q2
R1: 10 k, R2: 47 k
Q1: RN1104F
Q2: RN2107F
Marking
54
E
JEDEC
JEITA
TOSHIBA
Weight: g (typ.)
Equivalent Circuit (top view)
54
24
Q2
Q1
123
123
1 2002-01-30


RN47A4 데이터시트, 핀배열, 회로
Maximum Ratings (Ta = 25°C) (Q1)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
50
50
10
100
Maximum Ratings (Ta = 25°C) (Q2)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
-50
-50
-6
-100
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector power dissipation
Junction temperature
Storage temperature range
Note: Total rating
Symbol
PC (Note)
Tj
Tstg
Rating
200
150
-55~150
Unit
V
V
V
mA
Unit
V
V
V
mA
Unit
mW
°C
°C
RN47A4
2 2002-01-30




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제조업체: Toshiba Semiconductor

( toshiba )

RN47A4 transistor

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RN47A4

TOSHIBA Transistor Silicon NPNPNP Epitaxial Type - Toshiba Semiconductor