파트넘버.co.kr RN2909FE 데이터시트 PDF


RN2909FE 반도체 회로 부품 판매점

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)



Toshiba Semiconductor 로고
Toshiba Semiconductor
RN2909FE 데이터시트, 핀배열, 회로
RN2907FE~RN2909FE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2907FE,RN2908FE,RN2909FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
Unit: mm
· Two devices are incorporated into an Extreme-Super-Mini (6 pin)
package.
· Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact
equipment and save assembly cost.
· Complementary to RN1907FE~RN1909FE
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Type No.
RN2907FE
RN2908FE
RN2909FE
R1 (kW)
10
22
47
R2 (kW)
47
47
22
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN2907FE~
RN2909FE
RN2907FE
Emitter-base voltage
RN2908FE
RN2909FE
Collector current
Collector power dissipation RN2907FE~
Junction temperature
RN2909FE
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC (Note)
Tj
Tstg
Rating
-50
-50
-6
-7
-15
-100
100
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Note: Total rating
JEDEC
JEITA
TOSHIBA
Weight: g (typ.)
Equivalent Circuit
(top view)
654
Q1 Q2
123
1 2003-01-10


RN2909FE 데이터시트, 핀배열, 회로
RN2907FE~RN2909FE
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output
capacitance
Input resistor
Resistor ratio
RN2907FE~2909FE
RN2907FE
RN2908FE
RN2909FE
RN2907FE
RN2908FE
RN2909FE
RN2907FE~2909FE
RN2907FE
RN2908FE
RN2909FE
RN2907FE
RN2908FE
RN2909FE
RN2907FE~2909FE
RN2907FE~2909FE
RN2907FE
RN2908FE
RN2909FE
RN2907FE
RN2908FE
RN2909FE
Symbol
ICBO
ICEO
IEBO
Test Condition
VCB = -50 V, IE = 0
VCE = -50 V, IB = 0
VEB = -6 V, IC = 0
VEB = -7 V, IC = 0
VEB = -15 V, IC = 0
hFE
VCE = -5 V,
IC = -10 mA
VCE (sat)
IC = -5 mA,
IB = -0.25 mA
VI (ON)
VCE = -0.2 V,
IC = -5 mA
VI (OFF)
VCE = -5 V,
IC = -0.1 mA
fT
VCE = -10 V,
IC = -5 mA
Cob
VCB = -10 V, IE = 0,
f = 1 MHz
R1 ¾
R1/R2
¾
Min Typ. Max Unit
¾ ¾ -100 nA
¾ ¾ -500
-0.081 ¾ -0.15
-0.078 ¾ -0.145 mA
-0.167 ¾ -0.311
80 ¾ ¾
80 ¾ ¾
70 ¾ ¾
¾ -0.1 -0.3 V
-0.7 ¾ -1.8
-1.0 ¾ -2.6 V
-2.2 ¾ -5.8
-0.5 ¾ -1.0
-0.6 ¾ -1.16 V
-1.5 ¾ -2.6
¾ 200 ¾ MHz
¾3
6
7
15.4
32.9
0.191
0.421
1.92
10
22
47
0.213
0.468
2.14
13
28.6
61.1
0.232
0.515
2.35
pF
kW
2 2003-01-10




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( toshiba )

RN2909FE transistor

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) - Toshiba Semiconductor



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