파트넘버.co.kr RN2909 데이터시트 PDF


RN2909 반도체 회로 부품 판매점

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)



Toshiba Semiconductor 로고
Toshiba Semiconductor
RN2909 데이터시트, 핀배열, 회로
RN2907~RN2909
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2907,RN2908,RN2909
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit in mm
l Including two devices in US6 (ultra super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1907~1909
Equivalent Circuit and Bias Resistor Values
Type No.
RN2907
RN2908
RN2909
R1 (k)
10
22
47
R2 (k)
47
47
22
JEDEC
EIAJ
TOSHIBA
Weight: 6.8 mg

2-2J1A
Equivalent Circuit (Top View)
000707EAA1
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
· The information contained herein is subject to change without notice.
2001-02-08 1/5


RN2909 데이터시트, 핀배열, 회로
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* : Total rating
RN2907~2909
RN2907
RN2908
RN2909
RN2907~2909
Symbol
VCBO
VCEO
VEBO
IC
PC*
Tj
Tstg
Rating
50
50
6
7
15
100
200
150
55~150
Unit
V
V
V
mA
mW
°C
°C
RN2907~RN2909
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off
current
Emitter cut-off
current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Translation
frequency
Collector output
capacitance
Input resistor
Resistor ratio
RN2907~2909
RN2907
RN2908
RN2909
RN2907
RN2908
RN2909
RN2907~2909
RN2907
RN2908
RN2909
RN2907
RN2908
RN2909
RN2907~2909
RN2907~2909
RN2907
RN2908
RN2909
RN2907
RN2908
RN2909
Symbol
ICBO
ICEO
IEBO
hFE
Test
Circuit
Test Condition
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 6V, IC = 0
VEB = 7V, IC = 0
VEB = 15V, IC = 0
VCE = 5V, IC = 10mA
VCE (sat) IC = 5mA, IB = 0.25mA
VI (ON)
VI (OFF)
VCE = 0.2V, IC = 5mA
VCE = 5V, IC = 0.1mA
fT
Cob
R1
R1/R2
VCE = 10V, IC = 5mA
VCB = 10V, IE = 0,
f = 1MHz
――
――
Min Typ. Max Unit
― ― −100 nA
― ― −500 nA
0.081
0.15
0.078 ― −0.145 mA
0.167 ― −0.311
80 ― ―
80 ― ― ―
70 ― ―
― −0.1 0.3 V
0.7 ― −1.8
1.0 ― −2.6 V
2.2 ― −5.8
0.5 ― −1.0
0.6
― −1.16
V
1.5 ― −2.6
200 MHz
3
6
7
15.4
32.9
0.191
0.421
1.92
10
22
47
0.213
0.468
2.14
13
28.6
61.1
0.232
0.515
2.35
pF
k
2001-02-08 2/5




PDF 파일 내의 페이지 : 총 5 페이지

제조업체: Toshiba Semiconductor

( toshiba )

RN2909 transistor

데이터시트 다운로드
:

[ RN2909.PDF ]

[ RN2909 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


RN2901

(RN2901 - RN2906) Transistor Silicon PNP Epitaxial Type - Toshiba



RN2901AFS

(RN2901AFS - RN2906AFS) Transistor Silicon PNP Epitaxial Type - Toshiba



RN2901FE

(RN2901FE - RN2906FE) Transistor Silicon PNP Epitaxial Type - Toshiba



RN2901FS

(RN2901FS - RN2906FS) Transistor Silicon PNP Epitaxial Type - Toshiba



RN2902

(RN2901 - RN2906) Transistor Silicon PNP Epitaxial Type - Toshiba



RN2902AFS

(RN2901AFS - RN2906AFS) Transistor Silicon PNP Epitaxial Type - Toshiba



RN2902FE

(RN2901FE - RN2906FE) Transistor Silicon PNP Epitaxial Type - Toshiba



RN2902FS

(RN2901FS - RN2906FS) Transistor Silicon PNP Epitaxial Type - Toshiba



RN2903

Transceiver Module - Microchip