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RN2303 반도체 회로 부품 판매점

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)



Toshiba Semiconductor 로고
Toshiba Semiconductor
RN2303 데이터시트, 핀배열, 회로
RN2301~RN2306
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2301,RN2302,RN2303
RN2304,RN2305,RN2306
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1301~1306
Equivalent Circuit
Bias Resistor Values
Type No. R1 (k)
RN2301
RN2302
RN2303
RN2304
RN2305
RN2306
4.7
10
22
47
2.2
4.7
R2 (k)
4.7
10
22
47
47
47
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2301~2306
RN2301~2304
RN2305, 2306
RN2301~2306
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
50
50
10
5
100
100
150
55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.006g
Unit
V
V
V
mA
mW
°C
°C
SC-70
2-2E1A
1 2001-06-07


RN2303 데이터시트, 핀배열, 회로
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current RN2301~2306
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Translation frequency
Collector output
capacitance
Input resistor
Resistor ratio
RN2301
RN2302
RN2303
RN2304
RN2305
RN2306
RN2301
RN2302
RN2303
RN2304
RN2305
RN2306
RN2301~2306
RN2301
RN2302
RN2303
RN2304
RN2305
RN2306
RN2301~2304
RN2305, 2306
RN2301~2306
RN2301~2306
RN2301
RN2302
RN2303
RN2304
RN2305
RN2306
RN2301~2304
RN2305
RN2306
Symbol
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
R1
R1/R2
Test
Circuit
Test Condition
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 10V, IC = 0
VEB = 5V, IC = 0
VCE = 5V
IC = 10mA
IC = 5mA
IB = 0.25mA
VCE = 0.2V
IC = 5mA
VCE = 5V,
IC = 0.1mA
VCE = 10V,
IC = 5mA
VCB = 10V, IE = 0
f = 1MHz
――
RN2301~RN2306
Min Typ. Max Unit
― ― −100
nA
― ― −500
0.82 ― −1.52
0.38 ― −0.71
0.17
0.082
0.33
0.15
mA
0.078 ― −0.145
0.074 ― −0.138
30 ― ―
50 ― ―
70 ― ―
80 ― ―
80 ― ―
80 ― ―
― −0.1 0.3 V
1.1 ― −2.0
1.2 ― −2.4
1.3
1.5
― −3.0
― −5.0
V
0.6 ― −1.1
0.7 ― −1.3
1.0
0.5
― −1.5
― −0.8
V
200 MHz
3
6 pF
3.29 4.7 6.11
7 10 13
15.4 22 28.6
32.9 47 61.1
1.54 2.2 2.86
3.29 4.7 6.11
0.9 1.0 1.1
0.0421 0.0468 0.0515
0.09 0.1 0.11
k
2 2001-06-07




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제조업체: Toshiba Semiconductor

( toshiba )

RN2303 transistor

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) - Toshiba Semiconductor



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