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Toshiba Semiconductor |
RN2210,RN2211
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2210,RN2211
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1210, 1211
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
JEDEC
EIAJ
TOSHIBA
Unit Weight: 0.13g
−50
−50
−5
−100
300
150
−55~150
V
V
V
mA
mW
°C
°C
―
―
2-4E1A
1 2001-06-07
RN2210,RN2211
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Translation frequency
Collector output capacitance
Input resistor
RN2210
RN2211
Symbol
ICBO
IEBO
hFE
VCE (sat)
fT
Cob
Test
Circuit
Test Condition
― VCB = −50V, IE = 0
― VEB = −5V, IC = 0
― VCE = −5V, IC = −1mA
― IC = −5mA, IB = −0.25mA
― VCE = −10V, IC = −5mA
― VCB = −10V, IE = 0, f = 1MHz
R1 ―
―
Min
―
―
120
―
―
―
3.29
7
Typ.
―
―
―
−0.1
200
3
4.7
10
Max Unit
−100
−100
400
−0.3
―
6
6.11
13
nA
nA
―
V
MHz
pF
kΩ
2 2001-06-07
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