파트넘버.co.kr RN2105 데이터시트 PDF


RN2105 반도체 회로 부품 판매점

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)



Toshiba Semiconductor 로고
Toshiba Semiconductor
RN2105 데이터시트, 핀배열, 회로
RN2101~RN2106
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2101,RN2102,RN2103
RN2104,RN2105,RN2106
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1101~RN1106
Equivalent Circuit and Bias Resister Values
Type No.
RN2101
RN2102
RN2103
RN2104
RN2105
RN2106
R1 (k)
4.7
10
22
47
2.2
4.7
R2 (k)
4.7
10
22
47
47
47
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2101~2106
RN2101~2104
RN2105, 2106
RN2101~2106
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
50
50
10
5
100
100
150
55~150
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
Unit
V
V
V
mA
mW
°C
°C
2-2H1A
1 2001-06-07


RN2105 데이터시트, 핀배열, 회로
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off
current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector Output
capacitance
Input resistor
Resistor ratio
RN2101~2106
RN2101
RN2102
RN2103
RN2104
RN2105
RN2106
RN2101
RN2102
RN2103
RN2104
RN2105
RN2106
RN2101~2106
RN2101
RN2102
RN2103
RN2104
RN2105
RN2106
RN2101~2104
RN2105, 2106
RN2101~2106
RN2101~2106
RN2101
RN2102
RN2103
RN2104
RN2105
RN2106
RN2101~2104
RN2105
RN2106
Symbol
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
R1
R1/R2
Test
Circuit
Test Condition
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 10V, IC = 0
VEB = 5V, IC = 0
VCE = 5V,
IC = 10mA
IICB
=
=
5mA,
0.25mA

IVCC=E
= 0.2V,
5mA

VCE = 5V,
IC = 0.1mA

VCE = 10V,
IC = 5mA

VCB = 10V, IE = 0,
f = 1MHz


RN2101~RN2106
Min Typ. Max Unit

0.82
0.38
0.17
0.082
0.078
0.074
30
50
70
80
80
80
― −100
nA
 500
― −1.52
 0.71
 0.33
mA
 0.15
 0.145
 0.138
――
――
――
――
――
――
― −0.1 0.3
V
1.1
1.2
1.3
1.5
0.6
0.7
1.0
0.5
2.0
2.4
3.0
5.0
1.1
1.3
1.5
0.8
V
V
 200
MHz
 3
6
3.29 4.7 6.11
7 10 13
15.4 22 28.6
32.9 47 61.1
1.54 2.2 2.86
3.29 4.7 6.11
0.9 1.0 1.1
0.0421 0.0468 0.0515
0.09 0.1 0.11
pF
k

2 2001-06-07




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제조업체: Toshiba Semiconductor

( toshiba )

RN2105 transistor

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관련 데이터시트


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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) - Toshiba Semiconductor



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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) - Toshiba Semiconductor



RN2103

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) - Toshiba Semiconductor



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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) - Toshiba Semiconductor



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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) - Toshiba Semiconductor



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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) - Toshiba Semiconductor



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