(PDF) RN1243 Datasheet - TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Número de pieza	RN1243
Descripción	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Fabricantes	Toshiba Semiconductor
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No Preview Available ! RN1241~RN1244 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1241,RN1242,RN1243,RN1244 For Muting and Switching Applications Unit: mm l High emitter-base voltage : VEBO = 25v (min) l High reverse hfe : reverse hFE = 150 (typ.) (VCE = −2V, IC = −4ma) l Low on resistance : RON = 1Ω (typ.) (IB = 5mA) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO Ic Pc Tj Tstg JEDEC EIAJ TOSHIBA Weight: 0.13g Rating 50 20 25 300 300 150 −55~150 Unit V V V mA mW °C °C ― ― 2-4E1A 1 2001-06-07 1 page

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PDF RN1243 Data sheet ( Hoja de datos )