파트넘버.co.kr RN1242 데이터시트 PDF


RN1242 반도체 회로 부품 판매점

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)



Toshiba Semiconductor 로고
Toshiba Semiconductor
RN1242 데이터시트, 핀배열, 회로
RN1241~RN1244
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1241,RN1242,RN1243,RN1244
For Muting and Switching Applications
Unit: mm
l High emitter-base voltage
: VEBO = 25v (min)
l High reverse hfe
: reverse hFE = 150 (typ.) (VCE = 2V, IC = 4ma)
l Low on resistance
: RON = 1(typ.) (IB = 5mA)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
Rating
50
20
25
300
300
150
55~150
Unit
V
V
V
mA
mW
°C
°C
2-4E1A
1 2001-06-07


RN1242 데이터시트, 핀배열, 회로
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Collector cut-off current
ICBO
VCB = 50V, IE = 0
Emitter cut-off current
IEBO
VEB = 25V, IC = 0
DC current gain
Collector-emitter saturation voltage
Translation frequency
Collector output capacitance
RN1241
hFE (Note)
VCE (sat)
fT
Cob
VCE = 2V, IC = 4mA
IC = 30mA, IB = 3mA
VCE = 6V, IC = 4mA
VCB = 10V, IE = 0, f = 1MHz
Input resistor
RN1242
R1
RN1243
RN1244
Note: hEE Classification A: 200~700 B: 350~1200
RN1241~RN1244
Min
200
3.9
7
15.4
1.54
Typ.
30
4.8
5.6
10
22
2.2
Max
0.1
0.1
1200
0.1
7.3
13
28.6
2.86
Unit
µA
µA
V
MHz
pF
k
2 2001-06-07




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제조업체: Toshiba Semiconductor

( toshiba )

RN1242 transistor

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관련 데이터시트


RN1241

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) - Toshiba Semiconductor



RN1242

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) - Toshiba Semiconductor



RN1243

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) - Toshiba Semiconductor



RN1244

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) - Toshiba Semiconductor