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Toshiba Semiconductor |
RN1241~RN1244
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1241,RN1242,RN1243,RN1244
For Muting and Switching Applications
Unit: mm
l High emitter-base voltage
: VEBO = 25v (min)
l High reverse hfe
: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4ma)
l Low on resistance
: RON = 1Ω (typ.) (IB = 5mA)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
Rating
50
20
25
300
300
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
―
―
2-4E1A
1 2001-06-07
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Collector cut-off current
ICBO
― VCB = 50V, IE = 0
Emitter cut-off current
IEBO
― VEB = 25V, IC = 0
DC current gain
Collector-emitter saturation voltage
Translation frequency
Collector output capacitance
RN1241
hFE (Note)
VCE (sat)
fT
Cob
― VCE = 2V, IC = 4mA
― IC = 30mA, IB = 3mA
― VCE = 6V, IC = 4mA
― VCB = 10V, IE = 0, f = 1MHz
―
Input resistor
RN1242
―
R1
RN1243
―
―
RN1244
―
Note: hEE Classification A: 200~700 B: 350~1200
RN1241~RN1244
Min
―
―
200
―
―
―
3.9
7
15.4
1.54
Typ.
―
―
―
―
30
4.8
5.6
10
22
2.2
Max
0.1
0.1
1200
0.1
―
―
7.3
13
28.6
2.86
Unit
µA
µA
―
V
MHz
pF
kΩ
2 2001-06-07
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