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RN1221 반도체 회로 부품 판매점

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)



Toshiba Semiconductor 로고
Toshiba Semiconductor
RN1221 데이터시트, 핀배열, 회로
RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1221,RN1222,RN1223,RN1224
RN1225,RN1226,RN1227
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l High current type (IC(MAX) = 800mA)
l With built-in bias resistors.
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Low VCE (sat)
l Complementary to RN2221~2227
Equivalent Circuit
Type No. R1 (k)
RN1221
RN1222
RN1223
RN1224
RN1225
RN1226
RN1227
1
2.2
4.7
10
0.47
1
2.2
R2 (k)
1
2.2
4.7
10
10
10
10
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
2-4E1A
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1221~1227
RN1221~1224
RN1225, 1226
RN1227
RN1221~1227
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg
Rating
50
50
10
5
6
800
300
150
55~150
Unit
V
V
V
mA
mW
°C
°C
1 2001-06-07


RN1221 데이터시트, 핀배열, 회로
RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Translation frequency
Collector output
capacitance
RN1221~1227
RN1221
RN1222
RN1223
RN1224
RN1225
RN1226
RN1227
RN1221
RN1222
RN1223
RN1224
RN1225
RN1226
RN1227
RN1221
RN1222~1227
RN1221
RN1222
RN1223
RN1224
RN1225
RN1226
RN1227
RN1221~1224
RM1225, 1226
RN1227
RN1221~1227
RN1221~1227
Symbol
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
Test
Circuit
Test Condition
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 10V, IC = 0


VEB = 5V, IC = 0
VEB = 6V, IC = 0

VCE = 5V, IC = 100mA

IC = 50mA, IB = 2mA
IC = 50mA, IB = 1mA

VCE = 0.2V, IC = 100mA

VCE = 5V, IC = 0.1mA
 VCE = 5V, IC = 20mA

VCB = 10V, IE = 0,
f = 1MHz
Min
3.85
1.75
0.82
0.38
0.365
0.35
0.378
60
65
70
90
90
90
90
1.0
1.4
2.0
3.0
0.6
0.7
1.0
0.8
0.4
0.5
Typ. Max Unit
100
nA
500
7.14
3.25
1.52
0.71 mA
0.682
0.65
0.703
――
――
――
―――
――
――
――
0.25 V
3.5
4.5
6.5
12.0 V
2.0
2.5
3.0
1.3
0.8 V
1.0
300 MHz
7 pF
2 2001-06-07




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제조업체: Toshiba Semiconductor

( toshiba )

RN1221 transistor

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