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Toshiba Semiconductor |
RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1221,RN1222,RN1223,RN1224
RN1225,RN1226,RN1227
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l High current type (IC(MAX) = 800mA)
l With built-in bias resistors.
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Low VCE (sat)
l Complementary to RN2221~2227
Equivalent Circuit
Type No. R1 (kΩ)
RN1221
RN1222
RN1223
RN1224
RN1225
RN1226
RN1227
1
2.2
4.7
10
0.47
1
2.2
R2 (kΩ)
1
2.2
4.7
10
10
10
10
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
―
―
2-4E1A
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1221~1227
RN1221~1224
RN1225, 1226
RN1227
RN1221~1227
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg
Rating
50
50
10
5
6
800
300
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
1 2001-06-07
RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Translation frequency
Collector output
capacitance
RN1221~1227
RN1221
RN1222
RN1223
RN1224
RN1225
RN1226
RN1227
RN1221
RN1222
RN1223
RN1224
RN1225
RN1226
RN1227
RN1221
RN1222~1227
RN1221
RN1222
RN1223
RN1224
RN1225
RN1226
RN1227
RN1221~1224
RM1225, 1226
RN1227
RN1221~1227
RN1221~1227
Symbol
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
Test
Circuit
Test Condition
― VCB = 50V, IE = 0
― VCE = 50V, IB = 0
―
―
VEB = 10V, IC = 0
―
―
―
VEB = 5V, IC = 0
―
― VEB = 6V, IC = 0
―
―
―
― VCE = 5V, IC = 100mA
―
―
―
― IC = 50mA, IB = 2mA
IC = 50mA, IB = 1mA
―
―
―
― VCE = 0.2V, IC = 100mA
―
―
―
―
― VCE = 5V, IC = 0.1mA
―
― VCE = 5V, IC = 20mA
―
VCB = 10V, IE = 0,
f = 1MHz
Min
―
―
3.85
1.75
0.82
0.38
0.365
0.35
0.378
60
65
70
90
90
90
90
―
1.0
1.4
2.0
3.0
0.6
0.7
1.0
0.8
0.4
0.5
―
―
Typ. Max Unit
― 100
nA
― 500
― 7.14
― 3.25
― 1.52
― 0.71 mA
― 0.682
― 0.65
― 0.703
――
――
――
―――
――
――
――
― 0.25 V
― 3.5
― 4.5
― 6.5
― 12.0 V
― 2.0
― 2.5
― 3.0
― 1.3
― 0.8 V
― 1.0
300 ― MHz
7 ― pF
2 2001-06-07
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