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Toshiba Semiconductor |
RN1210,RN1211
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1210,RN1211
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors.
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2210, RN2211
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg
Rating
50
50
5
Unit JEDEC
V EIAJ
V TOSHIBA
Weight: 0.13g
V
100 mA
300 mW
150 °C
−55~150
°C
Electrical Characteristics (Ta = 25°C)
―
―
2-4E1A
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Translation frequency
Collector output capacitance
Input resistor
RN1210
RN1211
Symbol
ICBO
IEBO
hFE
VCE (sat)
fT
Cob
R1
Test
Circuit
Test Condition
― VCB = 50V, IE = 0
― VEB = 5V, IC = 0
― VCE = 5V, IC = 1mA
― IC = 5mA, IB = 0.25mA
― VCE = 10V, IC = 5mA
― VCB = −10V, IE = 0, f = 1MHz
―
―
―
Min Typ. Max
― ― 100
― ― 100
120 ― 700
― 0.1 0.3
― 250 ―
―3
6
3.29 4.7 6.11
7 10 13
Unit
nA
nA
―
V
MHz
pF
kΩ
1 2001-06-07
RN1210,RN1211
2 2001-06-07
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