RN1201 반도체 회로 부품 판매점
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
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 Toshiba Semiconductor |
RN1201~RN1206
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1201,RN1202,RN1203,RN1204,RN1205,RN1206
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors.
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2201~2206
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ) R2 (kΩ)
RN1201
RN1202
RN1203
RN1204
RN1205
RN1206
4.7
10
22
47
2.2
4.7
4.7
10
22
47
47
47
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1201~1206
RN1201~1204
RN1205, 1206
RN1201~1206
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg
Rating
50
50
10
5
100
300
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
Unit
V
V
V
mA
mW
°C
°C
―
―
2-4E1A
1 2001-06-07
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current RN1201~1206
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Translation frequency
Collector output
capacitance
Input Resistor
Resistor Ratio
RN1201
RN1202
RN1203
RN1204
RN1205
RN1206
RN1201
RN1202
RN1203
RN1204
RN1205
RN1206
RN1201~1206
RN1201
RN1202
RN1203
RN1204
RN1205
RN1206
RN1201~1204
RN1205~1206
RN1201~1206
RN1201~1206
RN1201
RN1202
RN1203
RN1204
RN1205
RN1206
RN1201~1205
RN1205
RN1206
Symbol
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
R1
R1/R2
Test
Circuit
Test Condition
― VCB = 50V, IE = 0
― VCE = 50V, IB = 0
―
―
VEB = 10V, IC = 0
―
―
―
VEB = 5V, IC = 0
―
―
―
―
VCE = 5V, IC = 10mA
―
―
―
― IC = 5mA,
IB = 0.25mA
―
―
―
VCE = 0.2V, IC = 5mA
―
―
―
―
VCE = 5V, IC = 0.1mA
―
― VCE =10V, IC = 5mA
― VCB = 10V, IE = 0,
f = 1MHz
―
―
―
―
―
―
―
―
――
―
RN1201~RN1206
Min Typ. Max Unit
― ― 100 nA
― ― 500 nA
0.82 ― 1.52
0.38 ― 0.71
0.17
0.082
―
―
0.33
0.15
mA
0.078 ― 0.145
0.074 ― 0.138
30 ― ―
50 ― ―
70 ― ―
―
80 ― ―
80 ― ―
80 ― ―
― 0.1 0.3 V
1.1 ― 2.0
1.2 ― 2.4
1.3 ― 3.0
V
1.5 ― 5.0
0.6 ― 1.1
0.7 ― 1.3
1.0 ― 1.5
V
0.5 ― 0.8
― 250 ― MHz
―3
6 pF
3.29 4.7 6.11
7 10 13
15.4 22 28.6
32.9 47 61.1
1.54 2.2 2.86
3.29 4.7 6.11
0.9 1.0 1.1
0.0421 0.0468 0.0515
0.09 0.1 0.11
kΩ
―
2 2001-06-07
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PDF 파일 내의 페이지 : 총 6 페이지
제조업체: Toshiba Semiconductor
( toshiba )
RN1201 transistor
데이터시트 다운로드 :
[ RN1201.PDF ]
[ RN1201 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
RN1201
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) - Toshiba Semiconductor
RN1202
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) - Toshiba Semiconductor
RN1203
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) - Toshiba Semiconductor
RN1204
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) - Toshiba Semiconductor
RN1205
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) - Toshiba Semiconductor
RN1206
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) - Toshiba Semiconductor
RN1207
Transistor Silicon NPN Epitaxial Type - Toshiba