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TIP110 반도체 회로 부품 판매점

Plastic Medium-Power Complementary Silicon Transistors



ON Semiconductor 로고
ON Semiconductor
TIP110 데이터시트, 핀배열, 회로
TIP110, TIP111, TIP112
(NPN); TIP115, TIP116,
TIP117 (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
Designed for generalpurpose amplifier and lowspeed switching
applications.
Features
High DC Current Gain
hFE = 2500 (Typ) @ IC
= 1.0 Adc
CollectorEmitter Sustaining Voltage @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) TIP110, TIP115
= 80 Vdc (Min) TIP111, TIP116
= 100 Vdc (Min) TIP112, TIP117
Low CollectorEmitter Saturation Voltage
VCE(sat) = 2.5 Vdc (Max) @ IC
= 2.0 Adc
Monolithic Construction with Builtin BaseEmitter Shunt Resistors
PbFree Packages are Available*
www.onsemi.com
DARLINGTON
2 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
6080100 VOLTS, 50 WATTS
MARKING
DIAGRAM
4
TO220AB
CASE 221A
STYLE 1
TIP11xG
AYWW
12 3
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
TIP11x
x
A
Y
WW
G
= Device Code
= 0, 1, 2, 5, 6, or 7
= Assembly Location
= Year
= Work Week
= PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 Rev. 8
1
Publication Order Number:
TIP110/D


TIP110 데이터시트, 핀배열, 회로
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
MAXIMUM RATINGS
Rating
Symbol
TIP110, TIP111, TIP112,
TIP115 TIP116 TIP117
Unit
CollectorEmitter Voltage
CollectorBase Voltage
EmitterBase Voltage
Collector Current Continuous
Peak
VCEO
VCB
VEB
IC
60 80 100 Vdc
60 80 100 Vdc
5.0 Vdc
2.0 Adc
4.0
Base Current
Total Power Dissipation @ TC = 25°C
Derate above 25°C
IB 50 mAdc
PD 50 W
0.4 W/°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD 2.0 W
0.016
W/°C
Unclamped Inductive Load Energy Figure 13
E 25 mJ
Operating and Storage Junction
TJ, Tstg
65 to +150
°C
THERMAL CHARACTERISTICS
Characteristics
Symbol Max Unit
Thermal Resistance, JunctiontoCase
RqJC
2.5 °C/W
Thermal Resistance, JunctiontoAmbient
RqJA
62.5 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
TIP110, TIP115
TIP111, TIP116
TIP112, TIP117
VCEO(sus)
60
80
100
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
TIP110, TIP115
TIP111, TIP116
TIP112 ,TIP117
ICEO
mAdc
2.0
2.0
2.0
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
TIP110, TIP115
TIP111, TIP116
TIP112, TIP117
ICBO
mAdc
1.0
1.0
1.0
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 2.0 Adc, VCE = 4.0 Vdc)
IEBO
2.0 mAdc
hFE
1000
500
CollectorEmitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc)
VCE(sat)
2.5
Vdc
BaseEmitter On Voltage (IC = 2.0 Adc, VCE = 4.0 Vdc)
VBE(on)
2.8
Vdc
DYNAMIC CHARACTERISTICS
SmallSignal Current Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)
hfe 25 − −
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
TIP115, TIP116, TIP117
TIP110, TIP111, TIP112
Cob
200
100
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
www.onsemi.com
2




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