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ON Semiconductor |
TIP110, TIP111, TIP112
(NPN); TIP115, TIP116,
TIP117 (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
Designed for general−purpose amplifier and low−speed switching
applications.
Features
• High DC Current Gain −
hFE = 2500 (Typ) @ IC
= 1.0 Adc
• Collector−Emitter Sustaining Voltage − @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) − TIP110, TIP115
= 80 Vdc (Min) − TIP111, TIP116
= 100 Vdc (Min) − TIP112, TIP117
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.5 Vdc (Max) @ IC
= 2.0 Adc
• Monolithic Construction with Built−in Base−Emitter Shunt Resistors
• Pb−Free Packages are Available*
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DARLINGTON
2 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80−100 VOLTS, 50 WATTS
MARKING
DIAGRAM
4
TO−220AB
CASE 221A
STYLE 1
TIP11xG
AYWW
12 3
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
TIP11x
x
A
Y
WW
G
= Device Code
= 0, 1, 2, 5, 6, or 7
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 8
1
Publication Order Number:
TIP110/D
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
MAXIMUM RATINGS
Rating
Symbol
TIP110, TIP111, TIP112,
TIP115 TIP116 TIP117
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak
VCEO
VCB
VEB
IC
60 80 100 Vdc
60 80 100 Vdc
5.0 Vdc
2.0 Adc
4.0
Base Current
Total Power Dissipation @ TC = 25°C
Derate above 25°C
IB 50 mAdc
PD 50 W
0.4 W/°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD 2.0 W
0.016
W/°C
Unclamped Inductive Load Energy − Figure 13
E 25 mJ
Operating and Storage Junction
TJ, Tstg
– 65 to + 150
°C
THERMAL CHARACTERISTICS
Characteristics
Symbol Max Unit
Thermal Resistance, Junction−to−Case
RqJC
2.5 °C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
TIP110, TIP115
TIP111, TIP116
TIP112, TIP117
VCEO(sus)
60
80
100
−
−
−
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
TIP110, TIP115
TIP111, TIP116
TIP112 ,TIP117
ICEO
mAdc
− 2.0
− 2.0
− 2.0
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
TIP110, TIP115
TIP111, TIP116
TIP112, TIP117
ICBO
mAdc
− 1.0
− 1.0
− 1.0
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 2.0 Adc, VCE = 4.0 Vdc)
IEBO
− 2.0 mAdc
hFE
1000
−
500 −
−
Collector−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc)
VCE(sat)
− 2.5
Vdc
Base−Emitter On Voltage (IC = 2.0 Adc, VCE = 4.0 Vdc)
VBE(on)
− 2.8
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)
hfe 25 − −
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
TIP115, TIP116, TIP117
TIP110, TIP111, TIP112
Cob
− 200
− 100
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
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