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Fairchild Semiconductor |
December 2014
TIP105 / TIP107
PNP Epitaxial Silicon Darlington Transistor
Features
• Monolithic Construction with Built-in Base-Emitter
Shunt Resistors
• High DC Current Gain:
hFE = 1000 @ VCE = -4 V, IC = -3 A (Minimum)
• Collector-Emitter Sustaining Voltage
• Low Collector-Emitter Saturation Voltage
• Industrial Use
• Complementary to TIP102
1 TO-220
1.Base 2.Collector 3.Emitter
Equivalent Circuit
C
B
R1
≅Ω
≅Ω
R2
E
Ordering Information
Part Number
TIP105
TIP105TU
TIP107
TIP107TU
Top Mark
TIP105
TIP105
TIP107
TIP107
Package
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
Packing Method
Bulk
Rail
Bulk
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
TIP105
TIP107
-60
-100
V
VCEO
Collector-Emitter Voltage
TIP105
TIP107
-60
-100
V
VEBO
IC
ICP
IB
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Junction Temperature
Storage Temperature Range
-5
-8
-15
-1
150
-65 to 150
V
A
A
A
°C
°C
© 2001 Fairchild Semiconductor Corporation
TIP105 / TIP107 Rev. 1.1.0
www.fairchildsemi.com
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
PC
Parameter
Collector Dissipation (TA = 25°C)
Collector Dissipation (TC = 25°C)
Value
2
80
Unit
W
Electrical Characteristics(1)
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
VCEO(sus)
Collector-Emitter Sustaining
Voltage
TIP105
TIP107
ICEO Collector Cut-Off Current
TIP105
TIP107
ICBO Collector Cut-Off Current
TIP105
TIP107
IEBO Emitter Cut-Off Current
hFE DC Current Gain
VCE(sat)
VBE(on)
Cob
Collector-Emitter Saturation
Voltage
Base-Emitter On Voltage
Output Capacitance
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
Conditions
IC = -30 mA, IB = 0
VCE = -30 V, IB = 0
VCE = -50 V, IB = 0
VCB = -60 V, IE = 0
VCB = -100 V, IE = 0
VEB = -5 V, IC = 0
VCE = -4 V, IC = -3 A
VCE = -4 V, IC = -8 A
IC = -3 A, IB = -6 mA
IC = -8 A, IB = -80 mA
VCE = -4 V, IC = -8 A
VCB = -10 V, IE = 0,
f = 0.1 MHz
Min.
-60
-100
1000
200
Max.
-50
-50
-50
-50
-2
20000
-2.0
-2.5
-2.8
300
Unit
V
μA
μA
mA
V
V
pF
© 2001 Fairchild Semiconductor Corporation
TIP105 / TIP107 Rev. 1.1.0
2
www.fairchildsemi.com
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