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ON Semiconductor |
TIP100, TIP101, TIP102
(NPN); TIP105, TIP106,
TIP107 (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
Designed for general−purpose amplifier and low−speed switching
applications.
Features
• High DC Current Gain −
hFE = 2500 (Typ) @ IC
= 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) − TIP100, TIP105
= 80 Vdc (Min) − TIP101, TIP106
= 100 Vdc (Min) − TIP102, TIP107
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC
= 3.0 Adc
= 2.5 Vdc (Max) @ IC = 8.0 Adc
• Monolithic Construction with Built−in Base−Emitter Shunt Resistors
• Pb−Free Packages are Available*
www.onsemi.com
DARLINGTON 8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80−100 VOLTS, 80 WATTS
MARKING
DIAGRAM
12 3
4
TO−220AB
CASE 221A
STYLE 1
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
TIP10xG
AYWW
TIP10x
x
A
Y
WW
G
= Device Code
= 0, 1, 2, 5, 6, or 7
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 14
1
Publication Order Number:
TIP100/D
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
MAXIMUM RATINGS
Rating
Symbol
TIP100, TIP101, TIP102,
TIP105 TIP106 TIP107
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
− Peak
VCEO
VCB
VEB
IC
60 80 100 Vdc
60 80 100 Vdc
5.0 Vdc
8.0
15 Adc
Base Current
Total Power Dissipation
Derate above 25°C
@
TC
=
25°C
IB 1.0 Adc
PD
80 W
0.64 W/°C
Unclamped Inductive Load Energy (1)
E 30 mJ
Total Power Dissipation
Derate above 25°C
@
TA
=
25°C
PD
2.0
0.016
W
W/°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
TJ, Tstg
– 65 to + 150
°C
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Case
RqJC
1.56 °C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
VCEO(sus)
60
80
100
Vdc
−
−
−
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
ICEO
mAdc
− 50
− 50
− 50
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
ICBO
mAdc
− 50
− 50
− 50
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (1)
IEBO
− 8.0 mAdc
DC Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 8.0 Adc, VCE = 4.0 Vdc)
hFE −
1000
20,000
200 −
Collector−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 6.0 mAdc)
(IC = 8.0 Adc, IB = 80 mAdc)
VCE(sat)
−
−
Vdc
2.0
2.5
Base−Emitter On Voltage (IC = 8.0 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
VBE(on) − 2.8 Vdc
Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
TIP105, TIP106, TIP107
TIP100, TIP101, TIP102
hfe
Cob
4.0 − −
− 300 pF
− 200
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
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