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TLP180 반도체 회로 부품 판매점

TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR



Toshiba Semiconductor 로고
Toshiba Semiconductor
TLP180 데이터시트, 핀배열, 회로
TOSHIBA Photocoupler GaAs Ired & PhotoTransistor
TLP180
Telephone Use Equipment
Programmable Controllers
AC / DCInput Module
Telecommunication
TLP180
Unit in mm
The TOSHIBA mini flat coupler TLP180 is a small outline coupler, suitable
for surface mount assembly.
TLP180 consist of a photo transistor, optically coupled to a gallium
arsenide infrared emitting diode connected inverse parallel, and can
operate directly by AC input current.
Collector-emitter voltage: 80 V (min)
Current transfer ratio: 50% (min)
Rank GB: 100% (min)
Isolation voltage: 3750 Vrms (min)
UL recognized: UL1577, file No. E67349
BSI approved: BS EN60065:2002, certificate no.8285
BS EN60950-1:2002, certificate no.8286
TOSHIBA
114C1
Weight: 0.09 g (typ.)
Current Transfer Ratio
Classi-
fication(*1)
Current Transfer Ratio
IF = 5 mA, VCE = 5 V, Ta = 25
Min Max
Marking Of
Classification
Standard
50
600 Blank, YE, GR, BL , GB
Rank Y
50
150 YE
Rank GR
100
300 GR
Rank BL
200
600 BL
Rank GB
100
600 GB
The product with the Rank Y and BL are limited in production.
For details, please contact your nearest Toshiba sales representative.
(*1): Ex. rank GB: TLP180 (GB)
(Note) Application type name for certification test,
please use standard product type name, i.e.
TLP180(GB): TLP180
Pin Configuration
(top view)
16
34
1: Anode, Cathode
3: Cathode, Anode
4: Emitter
6: Collector
1 2009-01-19


TLP180 데이터시트, 핀배열, 회로
TLP180
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
Forward current detating (Ta53°C)
Pulse forward current
(Note 1)
Junction temperature
Collectoremitter voltage
Emittercollector voltage
Collector current
Power dissipation
Power dissipation derating (Ta 25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Total package power dissipation
Total package power dissipation derating (Ta 25°C)
Isolation voltage (AC,1 min., R.H. 60%) (Note 2)
IF(RMS)
ΔIF / °C
IFP
Tj
VCEO
VECO
IC
PC
ΔPC / °C
Tj
Tstg
Topr
Tsol
PT
ΔPT / °C
BVS
±50
0.7
±1
125
80
7
50
150
1.5
125
55 to 125
55 to 100
260
200
2.0
3750
mA
mA / °C
A
°C
V
V
mA
mW
mW / °C
°C
°C
°C
°C
mW
mW / °C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width 100 μs,f=100 Hz
Note 2: Device considered a two terminal device: Pins 1 and 3 shorted together and 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min Typ. Max Unit
Supply voltage
Forward current
Collector current
Operating temperature
VCC
IF(RMS)
IC
Topr
5
16
1
25
48 V
20 mA
10 mA
85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2 2009-01-19




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TLP180 transistor

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