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PDF VHB1-28T Data sheet ( Hoja de datos )
| Número de pieza | VHB1-28T | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
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VHB1-28T
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB1-28T is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 0.4 A
VCBO
55 V
VCEO
30 V
VEBO
PDISS
TJ
TSTG
θJC
3.5 V
5 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +200 OC
35 OC/W
PACKAGE STYLE TO-39
B
ØA
C
45°
ØD
E
F
GH
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A .200 / 5.080
B .029 / 0.740
.045 / 1.140
C .028 / 0.720
.034 / 0.860
D .335 / 8.510
.370 / 9.370
E .305 / 7.750
.335 / 8.500
F .240 / 6.100
.260 / 6.600
G .500 / 12.700
H .016 / 0.407
.020 / 0.508
ORDER CODE: ASI10720
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 5.0 mA
BVCER
IC = 5.0 mA
RBE = 10 Ω
BVCBO
IC = 0.1 mA
BVEBO
IE = 0.1 mA
ICEX VC = 55 V
VBE = -1.5 V
ICEO
VCE(S)
VE = 28 V
IC = 100 mA
IB = 20 mA
hFE VCE = 5.0 V
IC = 50 mA
IC = 360 mA
MINIMUM TYPICAL MAXIMUM
30
55
55
3.5
100
20
1.0
10 200
5.0
COB VCB = 28 V
f = 1.0 MHz
3.0
PG
VCE = 28 V
POUT = 1.0 W
η
f = 175 MHz
13
60
UNITS
V
V
V
V
µA
µA
V
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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