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Panasonic Semiconductor |
Composite Transistors
XP1216
Silicon NPN epitaxial planer transistor
For switching/digital circuits
s Features
q Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
q Reduction of the mounting area and assembly cost by one half.
2.1±0.1
0.425 1.25±0.1 0.425
15
2
34
Unit: mm
s Basic Part Number of Element
q UN1216 × 2 elements
0.2±0.1
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Rating Collector to base voltage
of Collector to emitter voltage
element Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
100
150
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1 : Base (Tr1)
2 : Emitter
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
Marking Symbol: 9N
Internal Connection
Tr1
1
5
2
3
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
* Ratio between 2 elements
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
hFE (small/large)*
VCE(sat)
VOH
VOL
fT
R1
IC = 10µA, IE = 0
IC = 2mA, IB = 0
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 6V, IC = 0
VCE = 10V, IC = 5mA
VCE = 10V, IC = 5mA
IC = 10mA, IB = 0.3mA
VCC = 5V, VB = 0.5V, RL = 1kΩ
VCC = 5V, VB = 2.5V, RL = 1kΩ
VCB = 10V, IE = –2mA, f = 200MHz
min
50
50
160
0.5
4.9
–30%
4
Tr2
typ max Unit
V
V
0.1 µA
0.5 µA
0.01 mA
460
0.99
0.25 V
V
0.2 V
150 MHz
4.7 +30% kΩ
1
Composite Transistors
PT — Ta
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
XP1216
IC — VCE
160
Ta=25˚C
140
IB=1.0mA
0.9mA
120 0.8mA
0.7mA
0.6mA
100
0.5mA
80 0.4mA
60 0.3mA
0.2mA
40
20 0.1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3
Ta=75˚C
0.1 25˚C
0.03
– 25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
hFE — IC
400
VCE=10V
350
Ta=75˚C
300
25˚C
250
– 25˚C
200
150
100
50
0
1 3 10 30 100 300 1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
10000
3000
1000
IO — VIN
VO=5V
Ta=25˚C
300
100
30
10
3
1
0.4 0.6 0.8 1.0 1.2 1.4
Input voltage VIN (V)
VIN — IO
100 VO=0.2V
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3 1 3 10 30
Output current IO (mA)
100
2
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