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Panasonic Semiconductor |
Composite Transistors
XP04286
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For switching/digital circuits
s Features
q Two elements incorporated into one package.
(Transistors with built-in resistor)
q Reduction of the mounting area and assembly cost by one half.
2.1±0.1
0.425 1.25±0.1 0.425
16
25
34
Unit: mm
s Basic Part Number of Element
q UN221N+UN1119
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Tr1 Collector to emitter voltage
Collector current
Collector to base voltage
Tr2 Collector to emitter voltage
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
50
50
100
–50
–50
–100
150
150
–55 to +150
Unit
V
V
mA
V
V
mA
mW
˚C
˚C
0.2±0.1
1 : Emitter (Tr1) 4 : Emitter (Tr2)
2 : Base (Tr1) 5 : Base (Tr2)
3 : Collector (Tr2) 6 : Collector (Tr1)
EIAJ : SC–88
S–Mini Type Package (6–pin)
Marking Symbol: HO
Internal Connection
Tr1
1
6
25
34
Tr2
1
Composite Transistors
s Electrical Characteristics (Ta=25˚C)
q Tr1
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VOH
VOL
R1
R1/R2
fT
Conditions
IC = 10µA, IE = 0
IC = 2mA, IB = 0
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 6V, IC = 0
VCE = 10V, IC = 5mA
IC = 10mA, IB = 0.3mA
VCC = 5V, VB = 0.5V, RL = 1kΩ
VCC = 5V, VB = 2.5V, RL = 1kΩ
min
50
50
80
4.9
–30%
VCB = 10V, IE = –2mA, f = 200MHz
XP04286
typ max Unit
V
V
0.1 µA
0.5 µA
0.2 mA
400
0.25 V
V
0.2 V
4.7 +30% kΩ
0.1
150 MHz
q Tr2
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VOH
VOL
R1
R1/R2
fT
Conditions
IC = –10µA, IE = 0
IC = –2mA, IB = 0
VCB = –50V, IE = 0
VCE = –50V, IB = 0
VEB = –6V, IC = 0
VCE = –10V, IC = –5mA
IC = –10mA, IB = – 0.3mA
VCC = –5V, VB = – 0.5V, RL = 1kΩ
VCC = –5V, VB = –2.5V, RL = 1kΩ
min
–50
–50
30
–4.9
–30%
VCB = –10V, IE = 1mA, f = 200MHz
typ max Unit
V
V
– 0.1 µA
– 0.5 µA
–1.5 mA
– 0.25 V
V
– 0.2
V
1 +30% kΩ
0.1
80 MHz
2
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