파트넘버.co.kr XN1210 데이터시트 PDF


XN1210 반도체 회로 부품 판매점

Silicon NPN epitaxial planer transistor



Panasonic Semiconductor 로고
Panasonic Semiconductor
XN1210 데이터시트, 핀배열, 회로
Composite Transistors
XN1210
Silicon NPN epitaxial planer transistor
For switching/digital circuits
s Features
q Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
q Reduction of the mounting area and assembly cost by one half.
q Transistor with built-in resistor
0.65±0.15
5
4
3
2.8
+0.2
-0.3
1.5
+0.25
-0.05
Unit: mm
0.65±0.15
1
2
s Basic Part Number of Element
q UN1210 × 2 elements
0.1 to 0.3
0.4±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Rating Collector to base voltage
of Collector to emitter voltage
element Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
100
300
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol: AC
Internal Connection
Tr1
5
1
4
3
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
*1 Ratio between 2 elements
Symbol
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
hFE (small/large)*1
VCE(sat)
VOH
VOL
fT
R1
Conditions
IC = 10µA, IE = 0
IC = 2mA, IB = 0
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 6V, IC = 0
VCE = 10V, IC = 5mA
VCE = 10V, IC = 5mA
IC = 10mA, IB = 0.3mA
VCC = 5V, VB = 0.5V, RL = 1k
VCC = 5V, VB = 2.5V, RL = 1k
VCB = 10V, IE = –2mA, f = 200MHz
min
50
50
160
0.5
4.9
–30%
2
Tr2
typ max Unit
V
V
0.1 µA
0.5 µA
0.01 mA
460
0.99
0.25 V
V
0.2 V
150 MHz
47 +30% k
1


XN1210 데이터시트, 핀배열, 회로
Composite Transistors
PT — Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (˚C)
XN1210
IC — VCE
60
IB=1.0mA
0.9mA
Ta=25˚C
0.8mA
50
40
0.4mA
30
0.3mA
0.5mA
0.6mA
0.7mA
0.1mA
20
10
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03 –25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
hFE — IC
400
VCE=10V
350
300
Ta=75˚C
250
25˚C
200
150 –25˚C
100
50
0
1 3 10 30 100 300 1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
10000
3000
1000
IO — VIN
VO=5V
Ta=25˚C
300
100
30
10
3
1
0.4 0.6 0.8 1.0 1.2 1.4
Input voltage VIN (V)
VIN — IO
100 VO=0.2V
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3 1 3 10 30
Output current IO (mA)
100
2




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XN1210 transistor

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